A study of crystallographic phases in non-stoichiometric (oxygen deficiency) indium oxide thin films

Joseph, Shay; Berger, S.

doi:10.1007/s10853-016-0487-2

Cited by 2 publications

(5 citation statements)

References 11 publications

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“…Actually, the appearance of metallic indium seems to be rather probable in our case as the metallic phase was found in In 2 O 3 and In 2 O 3 :Sn films by other investigators [36,37]. Consideration of the In-O phase diagram and general chemistry of indium oxide/hydroxide system also supports this assumption [34,38].…”

Section: Resultssupporting

confidence: 83%

“…If a material is crystalline, we receive the information from the interior area of grains, whereas the electrical properties are cumulative. Many optical investigations of In 2 O 3 and In 2 O 3 :H films have been undertaken [2,36,44,45]. According to S. Joseph and S. Berger, the fitting of IR optical transmission spectra by effective medium approximation reveals that no changes in In 2 O 3 transmittance should be observed if the volume fraction of metallic indium remains less than 10%.…”

Section: Resultsmentioning

confidence: 99%

“…According to S. Joseph and S. Berger, the fitting of IR optical transmission spectra by effective medium approximation reveals that no changes in In 2 O 3 transmittance should be observed if the volume fraction of metallic indium remains less than 10%. A larger indium excess results in a markedly lower transmittance as compared to that experimentally observed [36]. The presence of a metallic phase can be also deduced from the temperature dependence of the resistivity [46].…”

Section: Resultsmentioning

confidence: 99%

“…Oxidation is likely unfavourable when the In/O ratio is larger than 1, as both vertical and adiabatic electron affinities are negative for In 2 O. In oxygen-deficient In 2 O 3 films, metallic indium may form as a result of oversaturation by cooling down after deposition at elevated temperature [36]. In this case, indium precipitates according to HRTEM and EELS in a form of 5–30 nm nano-particles independently of an indium excess.…”

Section: Discussionmentioning

confidence: 99%

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Crystallisation Phenomena of In2O3:H Films

et al. 2019

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The crystallisation of sputter-deposited, amorphous In2O3:H films was investigated. The influence of deposition and crystallisation parameters onto crystallinity and electron hall mobility was explored. Significant precipitation of metallic indium was discovered in the crystallised films by electron energy loss spectroscopy. Melting of metallic indium at ~160 °C was suggested to promote primary crystallisation of the amorphous In2O3:H films. The presence of hydroxyl was ascribed to be responsible for the recrystallization and grain growth accompanying the inter-grain In-O-In bounding. Metallic indium was suggested to provide an excess of free electrons in as-deposited In2O3 and In2O3:H films. According to the ultraviolet photoelectron spectroscopy, the work function of In2O3:H increased during crystallisation from 4 eV to 4.4 eV, which corresponds to the oxidation process. Furthermore, transparency simultaneously increased in the infraredspectral region. Water was queried to oxidise metallic indium in UHV at higher temperature as compared to oxygen in ambient air. Secondary ion mass-spectroscopy results revealed that the former process takes place mostly within the top ~50 nm. The optical band gap of In2O3:H increased by about 0.2 eV during annealing, indicating a doping effect. This was considered as a likely intra-grain phenomenon caused by both (In0)O•• and (OH−)O• point defects. The inconsistencies in understanding of In2O3:H crystallisation, which existed in the literature so far, were considered and explained by the multiplicity and disequilibrium of the processes running simultaneously.

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Section: Resultssupporting

confidence: 83%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

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Crystallisation Phenomena of In2O3:H Films

et al. 2019

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“…Structural search simulations for In–O compound sheets were carried out using the CALYPSO code. , In our calculations, both the population size and number of generations are fixed to 30. The best 60% of structures were selected through particle-swarm optimization (PSO) to generate the next generation, while the other structures were generated randomly to guarantee the structural diversity.…”

Section: Methodsmentioning

confidence: 99%

A New Metallic In₃O₄ Sheet as an Anode Material for Sodium-Ion Batteries

et al. 2019

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Topological state of matter and high-performance electrode materials have attracted considerable attention all over the world. Here we combine these two by exploring the possibility of using In−O compound sheets for sodium-ion battery (SIB) anode materials. We report a novel In 3 O 4 sheet and explore its geometric structure, stability, electronic structure, and properties as anode materials for energy storage through first-principles swarm structural search. The predicted In 3 O 4 sheet exhibits great stability, metallic feature, and excellent electrode performance. The adsorption of Na atoms on 2 × 2 In 3 O 4 supercell is exothermic, which ensures stability and safety in practical applications. The competitive Na capacity, acceptable diffusion energy barrier, and low open-circuit voltage of In 3 O 4 sheet result in good rate capacity under operating conditions. We hope that our work will provide new insights into the studies on both anode materials for SIBs and quasi-two-dimensional metal oxides.

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A study of crystallographic phases in non-stoichiometric (oxygen deficiency) indium oxide thin films

Cited by 2 publications

References 11 publications

Crystallisation Phenomena of In2O3:H Films

Crystallisation Phenomena of In2O3:H Films

A New Metallic In₃O₄ Sheet as an Anode Material for Sodium-Ion Batteries

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A study of crystallographic phases in non-stoichiometric (oxygen deficiency) indium oxide thin films

Cited by 2 publications

References 11 publications

Crystallisation Phenomena of In2O3:H Films

Crystallisation Phenomena of In2O3:H Films

A New Metallic In3O4 Sheet as an Anode Material for Sodium-Ion Batteries

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A New Metallic In₃O₄ Sheet as an Anode Material for Sodium-Ion Batteries