A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing

Feng, Meixin; Sun, Qian; Liu, Jianping; Li, Zengcheng; Zhou, Yu; Zhang, Shuming; Yang, Hui

doi:10.3390/ma10050482

Cited by 10 publications

(6 citation statements)

References 19 publications

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“…Optoelectronic devices such as solar cells, photodetectors, field effect transistors, and light emitting diodes (LEDs) are crucial components for many kinds of commercial electronic equipment. Conventional semiconductor materials, such as silicon and gallium arsenide, gallium nitride, and silicon carbide, etc., have been fully developed and commercialized for the discrete device and the integrated circuit, resulting in high‐performance optoelectronic devices . While the fabrication of these devices usually employ very complicated process including photolithography, epitaxial growth, ion implantation and metal‐organic chemical vapor deposition, which guarantee the precise control of energy gap at the interfaces for efficient charge injection/transportation .…”

Section: Introductionmentioning

confidence: 99%

Impedance Spectroscopy: A Versatile Technique to Understand Solution‐Processed Optoelectronic Devices

Ali

Chang

Imran

et al. 2019

Physica Rapid Research Ltrs

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Solution‐processed optoelectronic devices based on conjugated polymers, colloidal quantum dots (CQDs), halide perovskites, and so on are now emerging as a new‐generation semiconductor technology which prevails its conventional counterparts in terms of low fabrication cost, ease of scalable manufacturing, and abundant material designability. However, the solution‐processed thin films obtained through spin‐coating, spray, inkjet printing, and doctor blading usually suffer from low film quality and a high defect density especially at the interfaces of different functional layers. Currently, the most significant subject is to address the non‐ideal interfaces for achieving improved performance of the devices. Impedance spectroscopy (IS) is a universal technique that can help to examine the charge behavior at the interfaces in an electrochemical or solid‐state multilayered device. Owing to its ability to elucidate the charge transfer, charge transport, and accumulation within the interfaces of electrochemical or multilayered devices with minimal effects to the devices themselves, the use of IS has increased vividly in the last decades. This review provides the basic principles of IS and its applications on solution‐processed optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Impedance Spectroscopy: A Versatile Technique to Understand Solution‐Processed Optoelectronic Devices

Ali

Chang

Imran

et al. 2019

Physica Rapid Research Ltrs

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“…The ABC model which is used in [33] for evaluating carrier recombination rate in QW and SCH is unable to consider a complete portion of injection efficiency as this term is dependent upon incomplete capture of carriers into the active region and carrier escape from the active region [36]. Hence, the ABC model is inadequate to describe the steep drop in peak optical power and efficiency of III-nitride based lasers.…”

Section: Output Power and Frequency Responsementioning

confidence: 99%

Numerical Investigation into Optoelectronic Performance of InGaN Blue Laser in Polar, Non-Polar and Semipolar Crystal Orientation

Roy

Kiratnia²,

Roy

et al. 2020

Crystals

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Recently, InGaN grown on semipolar and non-polar orientation has caused special attraction due to reduction in the built-in polarization field and increased confinement of high energy states compared to traditional polar c-plane orientation. However, any widespread-accepted report on output power and frequency response of the InGaN blue laser in non-c-plane orientation is readily unavailable. This work strives to address an exhaustive numerical investigation into the optoelectronic performance and frequency response of In0.17Ga0.83N/GaN quantum well laser in polar (0001), non-polar (101¯0) and semipolar (101¯2), (112¯2) and (101¯1) orientations by working out a 6 × 6 k.p Hamiltonian at the Γ-point using the tensor rotation technique. It is noticed that there is a considerable dependency of the piezoelectric field, energy band gap, peak optical gain, differential gain and output power on the modification in crystal orientation. Topmost optical gain of 4367 cm−1 is evaluated in the semipolar (112¯2)-oriented laser system at an emission wavelength of 448 nm when the injection carrier density is 3.7 × 1018 cm−3. Highest lasing power and lowest threshold current are reported to be 4.08 mW and 1.45 mA in semipolar (112¯2) crystal orientation. A state-space model is formed in order to achieve the frequency response which indicates the highest magnitude (dB) response in semipolar (112¯2) crystal orientation.

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“…The reasons for efficiency droop for spontaneous emission are due to Auger recombination and leakage current [22,23]. Efficiency droop under the lasing threshold affects the threshold current density of the laser [24]. Above the threshold current density, the IQE starts to increase as injected carriers result in recombination by stimulated emission.…”

Section: Laser Output Power and Internal Quantum Efficiencymentioning

confidence: 99%

Effects of an undoped-InGaN waveguide on the optical confinement and carrier dynamics of InGaN laser diodes

2018

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In this paper, we have analyzed the performance of laser diodes (LDs) with an undoped In x Ga 1−x N waveguide in association with variable In mole fractions varying from 0% to 6%. The InGaN waveguide significantly affected optical confinement and carrier dynamics in the LD. Laser output power, internal quantum efficiency (IQE), quantum well (QW) gain and optical confinement factor (OCF) are analyzed in correlation with In content in the waveguide. The OCF for TE1 mode at x = 0 is 0.0079, and it increases with x. The OCF for x = 0.06 is 0.0109. Quantum states in the QW reduced with In content, which reduced QW gain. However, improved OCF consequently improved the overall gain of the device. Peak IQE for x = 0 is ~0.28, which increased to ~0.683 for x = 0.06. Laser output power, slope efficiency and IQE improved with increasing In content. The threshold current density for x = 0 is 3.911 kA cm −2 , which drops to 1.806 kA cm −2 for x = 0.06. Auger recombination, Shockley-Read-Hall recombination and electron leakage are reduced for high In content in the waveguide. Auger carrier loss remains nearly constant above the threshold, hence efficiency droop above the threshold current density is attributed primarily to leakage current density. The efficiency droop for x = 0 is 25.59%, which increased to 36.66% for x = 0.06 at 25 kA cm −2 current density. However, the IQE for x = 0 at 25 kA cm −2 is 0.202, which increased to 0.436 for x = 0.06 at 25 kA cm −2 . Slope efficiency increases with In content; slope efficiency for x = 0.06 improves by 0.2126 W A −1 . Laser output power is improved by 1.91 W at 25 kA cm −2 for x = 0.06.

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A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing

Cited by 10 publications

References 19 publications

Impedance Spectroscopy: A Versatile Technique to Understand Solution‐Processed Optoelectronic Devices

Impedance Spectroscopy: A Versatile Technique to Understand Solution‐Processed Optoelectronic Devices

Numerical Investigation into Optoelectronic Performance of InGaN Blue Laser in Polar, Non-Polar and Semipolar Crystal Orientation

Effects of an undoped-InGaN waveguide on the optical confinement and carrier dynamics of InGaN laser diodes

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