A study of high NA EUV pattern stitching using rigorous stochastic lithography simulation

Robertson, Stewart A.; Schramm, Robert; Vaglio Pret, Alessandro; Wiaux, Vincent I.

doi:10.1117/12.2688230

International Conference on Extreme Ultraviolet Lithography 2023 2023

DOI: 10.1117/12.2688230

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A study of high NA EUV pattern stitching using rigorous stochastic lithography simulation

Stewart A. Robertson,

Robert Schramm,

Alessandro Vaglio Pret

et al.

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2024

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An experimental stitching study on the eve of high-NA EUV

Wiaux,

Davydova,

Van Look

et al. 2024

Optical and EUV Nanolithography XXXVII

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The combination of High NA EUV anamorphic projection optics and unchanged mask-blank size result in a "High NA field" with a maximum size of 26x16.5 mm² at wafer level. Therefore, to create a die larger than the High NA full field, two images are stitched together. So-called in-die stitching is enabled by a combination of design, mask, OPC, process, and scanner solutions. We present an overview of our learnings about at-resolution stitching based on a representative experimental study at NA=0.33, in preparation for tomorrow's NA=0.55.For a pitch 28nm vertical line-space, optimum conditions are confirmed experimentally to create a robust stitch. A P28 LS is measured post-stitching utilizing either a Ta absorber or a low-n absorber. For the latter, the higher reflectivity is experimentally mitigated by using sub-resolution-gratings. We also quantify the imaging impact of the transition between the absorber and the black border in the stitching region.

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An experimental stitching study on the eve of high-NA EUV

Wiaux,

Davydova,

Van Look

et al. 2024

Optical and EUV Nanolithography XXXVII

View full text Add to dashboard Cite

show abstract

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A study of high NA EUV pattern stitching using rigorous stochastic lithography simulation

Cited by 1 publication

References 2 publications

An experimental stitching study on the eve of high-NA EUV

An experimental stitching study on the eve of high-NA EUV

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