A Study of Impurities and Traps in Liquid Phase Epitaxial InP in Relation to Melt Prebaking

Semiconductor technologies continue to evolve and amaze us. New materials, new structures, new manufacturing tools, and new advancements in modelling and simulation form a breeding ground for novel high performance electronic and photonic devices. This book covers all aspects of semiconductor technology concerning materials, technological processes, and devices, including their modelling, design, integration, and manufacturing.High costs, long manufacturing cycles, and enormous increase in computing power are behind a recent rapid progress of the modelling, simulation, optimisation, and design of semiconductor devices. The first two chapters present the state-of-the-art in modelling of semiconductor processes and devices. Several examples are given: simulation of the switching characteristics of SiC GTO, MOSFET DC modelling for distortion analysis, or high-k dielectricsemiconductor modelling. VIIIOptical technologies are the future of communication systems. Chapter 14 is a review of a device engineering method to provide high functionality of passive nonlinear vertical-cavity devices exploiting saturable absorption in semiconductor MQWs. Chapter 15 is a summary of the stateof-the-art of all-optical flip-flops based on semiconductor technologies. Chapter 16 reviews the current development of optical detection technologies on silicon photonics platform. In chapter 17, the authors describe the design, fabrication technology, and device performance of InP Mach-Zehnder modulator monolithically integrated with semiconductor optical amplifier. In chapter 18, the authors propose a new approach to ultra-fast all-optical signal processing based on quantum dot devices. Chapter 19 discusses present status and future direction of all-optical digital processing through semiconductor optical amplifiers.Finally, chapter 20 presents a new approach to biomedical monitoring and analysis of selected human cognitive processes.

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Section: Present Statusmentioning

confidence: 99%

Semiconductor technologies

2009

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“…It has now been recognized that Si and S are the two major background donor impurity species present in the In and InP, and that C is the principal acceptor, originating from the graphite boat. 3 Various methods have been used to reduce the concentration of the residual impurities. Extended hydrogen baking of the In melt and the source solution ͑formed by adding InAs and GaAs͒ is widely known to lower the levels of both donor ͑Si and S͒ 4 and acceptor ͑Al, Mg, Zn͒ 5 impurities in the grown epitaxial layer.…”

Section: Introductionmentioning

confidence: 99%

Liquid phase epitaxial growth of InGaAs on InP using rare-earth-treated melts

Gao

Berger

Ervin

et al. 1996

Journal of Applied Physics

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Trimethylarsenic as an alternative to arsine in the metalorganic vapor phase epitaxy of device quality In0.53Ga0.47As/InP Appl.High-quality In 0.53 Ga 0.47 As epilayers have been grown on semi-insulating ͑100͒ Fe-doped InP substrates. The growths were performed by liquid phase epitaxy ͑LPE͒ using rare-earth-doped melts in a graphite boat. The rare-earth elements studied were Yb, Gd and Er which act as gettering agents of impurities. Hall measurements show an elevated electron mobility for rare-earth-treated samples over undoped samples, e ϭ11 470 cm 2 /V s at 300 K and reduced carrier concentration ͑n-type͒, 9.33ϫ10 13 cm Ϫ3 . The Hall results indicate an improvement in layer quality, but suggests that the treated layers are compensated. Photoluminescence ͑PL͒ studies show that the layers grown from rare-earth-doped melts have higher integrated PL efficiency with narrower PL linewidths than the undoped melt growths. The grown materials were fully characterized by Fourier transform infrared spectroscopy, double-crystal x-ray diffraction, energy dispersive spectroscopy, secondary-ion-mass spectroscopy, and deep level transient spectroscopy ͑DLTS͒. Compositional measurements reveal no measurable incorporation of rare-earth elements into the grown epilayers. DLTS measurements indicate the creation of two deep levels with rare-earth treatment, which is attributed to either the rare earth elements or impurities from within the rare-earth elements. Subsequent glow discharge mass spectrometry measurements reveal many impurities within the rare-earth elements which preferentially might lead to p-type doping centers and/or deep levels. Thus, rare-earth doping of LPE melts clearly improves epitaxial layer quality, however, the purity of commercially available rare-earth elements hinders optimal results.

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“…Typical LPE InP layers grown under these conditions posses electron concentrations above 10 17 cm −3 at room temperature. In addition to the above self-evident precautions, there are several methods to suppress residual impurity concentrations (Rhee & Bhattacharya, 1983;Kumar et al, 1995): -Prolonged baking of the growth solution above the growth temperature. A long bake-out under the dry hydrogen atmosphere leads to the removal of volatile impurities such as Zn, Mg, Cd, Te, and Se from the In melt by the evaporation.…”

mentioning

confidence: 99%