A study of initial growth mechanism of c-GaN on GaAs(1 0 0) by molecular beam epitaxy

Kimura, Ryuhei; Gotoh, Yutaka; Nagai, Takaya; Uchida, Yasutaka; Matsuzawa, Takeo; Takahashi, Kiyoshi; Schulz, C.

doi:10.1016/s0022-0248(98)00325-x

Journal of Crystal Growth

1998

DOI: 10.1016/s0022-0248(98)00325-x

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A study of initial growth mechanism of c-GaN on GaAs(1 0 0) by molecular beam epitaxy

Ryuhei Kimura

Yutaka Gotoh

Takaya Nagai

et al.

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Cited by 12 publications

(1 citation statement)

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“…In earlier work we reported that using an AlGaN layer formed by the nitridation of an Al 0.17 Ga 0.83 As buffer layer was an efficient process for ensuring growth of a highpurity c-GaN film [1,2]. However, there still remain some problems regarding AlGaAs growth.…”

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confidence: 99%

Cubic GaN Film Growth Using AlN/GaN Ordered Alloy by RF Plasma‐Assisted Molecular Beam Epitaxy

Shigemori

Shike

Takahashi

et al. 2002

phys. stat. sol. (c)

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. Hg; 78.66.Fd; 81.05.Ea; 81.15.Hi Cubic GaN films were grown on GaAs (100) using a newly introduced AlN/GaN ordered alloy fabricated by plasma-assisted molecular beam epitaxy. Dominant cubic GaN growth was confirmed by in situ reflection high-energy electron diffraction observations, photoluminescence (14 K) and X-ray diffraction measurements.Introduction Cubic GaN is expected to have lower resistivity and higher doping efficiency than the hexagonal phase due to its higher crystal symmetry. If high-quality c-GaN thin-film growth is realized, better performance of devices such as light emitting diodes (LEDs) and laser diodes (LDs) will be achievable.In earlier work we reported that using an AlGaN layer formed by the nitridation of an Al 0.17 Ga 0.83 As buffer layer was an efficient process for ensuring growth of a highpurity c-GaN film [1,2]. However, there still remain some problems regarding AlGaAs growth. The first relates to the fluctuation of Al molar content, which in turn affects significantly the purity of the structural phase of the epilayer. The second is the difficulty of maintaining high-quality stoichiometric growth for an extended period of time because careful control of each beam flux (Al, Ga and As) is required.In this work, a newly developed AlN/GaN ordered alloy (OA) is employed as a buffer layer. It is expected that a uniform effective Al molar content can be maintained by varying the ratio of each layer thickness. This process makes it easier to obtain highquality stoichiometric growth for extended periods because all constituent layers are binary materials. By the use of an OA buffer layer, the effective Al molar content can be kept low enough to prevent both the generation of hexagonal nuclei and the concomitant high resistivity by careful thickness control of each layer in the ultrathin region.High-quality c-GaN film growth was achieved using an AlN/GaN OA on GaAs by plasma-assisted molecular beam epitaxy (RF-MBE). Detailed X-ray diffraction (XRD) measurements, such as w scans, reciprocal area maps and pole figures, were carried out on the c-GaN epilayer. As no mixing of the hexagonal phase could be detected by these measurements, it was concluded that almost 100% phase purity was obtained.

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confidence: 99%

Cubic GaN Film Growth Using AlN/GaN Ordered Alloy by RF Plasma‐Assisted Molecular Beam Epitaxy

Shigemori

Shike

Takahashi

et al. 2002

phys. stat. sol. (c)

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Direct growth of cubic AlN and GaN on Si (001) with plasma‐assisted MBE

Ohachi¹,

Kikuchi

Ito

et al. 2003

phys. stat. sol. (c)

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Highly lattice mismatched (HM 2 ) heteroepitaxial growth of cubic zincblende c-AlN and c-GaN on Si (001) was performed by MBE using plasma excited nitrogen sources without using a low temperature buffer layer. The early stage of the direct nucleation of AlN and GaN on a Si substrate using microwave and radio frequency plasma-assisted MBE was studied. The islands of a zincblende structured material (c-SiN x [a = 0.43 nm]), effectively worked as a seed for successive coherent growth of c-AlN and c-GaN oriented 〈001〉. The growth of c-AlN and c-GaN was analyzed by reflection high energy electron diffraction, X-ray diffraction, and photoluminescence.1 Introduction Hybrid application of group III nitride semiconductors with silicon technology is a promising one for optical and electronic applications. The growth method of molecular beam epitaxy (MBE) is the most suitable one for interface flatness control and composition control of alloy crystals for optical and electronic applications. Although the hexagonal wurzite (W) phase (h-) of AlN and GaN is currently used for various applications, the cubic zincblende (ZB) (c-) phase is more attractive, because of the doping property and the similarity of the cubic system of Si technology for hybrid application. The growth of ZB group III nitrides by MBE was reported by using a low temperature buffer layer or surface pre-treatments of carbonization or nitridation for a Si substrate [1][2][3][4][5][6][7][8][9][10][11][12] and for other substrates [13 -20]. To overcome the problem of highly lattice mismatched (HM 2 ) hetero-epitaxial growth [21] is important for hybrid application. No direct growth of GaN from single crystal islands of silicon nitride (SiN x ) on Si(001) was reported before, except for the formation of amorphous SiN x at the GaN/Si interface [6][7][8]. The amorphous SiN x substrate operated as nucleation cores of h-GaN [7]. Single crystal islands work as coherent multi nuclei for the direct growth, which has merits to reduce the interface electric resistance for vertical devices and to reduce the process steps of device preparation. In this report the heteroepitaxial growth of ZB c-AlN and c-GaN on Si (001) will be performed by MBE without a low temperature buffer layer using nitrogen plasmas of microwave (µ-) and radiofrequency (rf-) discharges. Coherent growth for the single phase of cubic nitrides depending on plasma sources will be discussed.

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Molecular beam epitaxy growth of GaN, AlN and InN

Wang

Yoshikawa

2004

Progress in Crystal Growth and Characterization of Materials

175

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A study of initial growth mechanism of c-GaN on GaAs(1 0 0) by molecular beam epitaxy

Cited by 12 publications

References 10 publications

Cubic GaN Film Growth Using AlN/GaN Ordered Alloy by RF Plasma‐Assisted Molecular Beam Epitaxy

Cubic GaN Film Growth Using AlN/GaN Ordered Alloy by RF Plasma‐Assisted Molecular Beam Epitaxy

Direct growth of cubic AlN and GaN on Si (001) with plasma‐assisted MBE

Molecular beam epitaxy growth of GaN, AlN and InN

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