A study of intrinsic amorphous silicon thin film deposited on flexible polymer substrates by magnetron sputtering

Liu, Kun; Yao, Wanxiang; Wang, Dongyang; Ba, Dechun; Liu, Hailong; Gu, Xiaoguang; Meng, Donghui; Du, Guangyu; Xie, Yonghong; Ba, Yi

doi:10.1016/j.jnoncrysol.2016.07.019

Cited by 11 publications

(3 citation statements)

References 49 publications

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“…3 (b) demonstrates the amorphous state of the silicon and ITO sputtered layers associated with the prepared absorber with multilayer structure, where no coherent XRD peaks are matching these materials. This observation correlates with previous published works that investigated the structural characteristics of sputtered a-Si [18][19][20]. The obtained structural properties can be explained by a mixture of two effects, firstly, the ultralow thickness of the deposited silicon sub-layers preventing the crystallization of the Si material.…”

Section: Morphological and Structural Characteristicssupporting

confidence: 90%

“…Accordingly, a-Si:H-based technology is attractive, being able to provide a favorable efficiency value of 10.2% with low production cost [17]. Even though these fascinating properties, a-Si:H-based solar cells face strong pressure to compete it counterparts based on c-Si materials in terms of efficiency/cost ratio, and even stability [18][19][20]. This passes inevitably through avoiding various problems associated with this technology.…”

Section: Introductionmentioning

confidence: 99%

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Absorption enhancement in amorphous Si by introducing RF sputtered Ti intermediate layers for photovoltaic applications

Ferhati

Djeffal

Boubiche

et al. 2021

Materials Science and Engineering: B

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In this paper, embedded Amorphous-Silicon (a-Si) and Titanium (Ti) ultrathin-films forming a multilayer structure is proposed as a new efficient absorber material for thin-film solar cells (TFSCs). Promising design strategy based on combining FDTD (Finite Difference Time Domain) with Particle Swarm Optimization (PSO) was adopted to identify the a-Si/Ti multilayer geometry offering the highest Total Absorbance Efficiency (TAE). It is found that the optimized design can serve as an effective absorber, yielding superb TAE exceeding 80%.The optimized a-Si/Ti multilayer was then elaborated by successive growth of a-Si and Ti ultrathin layers using RF magnetron sputtering technique. The sputtered a-Si/Ti thin-film was characterized by Scanning Electron Microscopy (SEM), X-ray diffraction (XRD), and UV-Visible absorption spectroscopy. Measurements showed a unique optical behavior, promoting broadband absorbance over the visible and even NIR spectrum ranges. In particular, the prepared a-Si/Ti absorber exhibits an optical band-gap of 1.36 eV, which is suitable for photovoltaic applications. A performance assessment of the elaborated absorber was investigated by extracting I-V characteristics and electrical parameters under dark and 1-sun illumination. It is revealed that the proposed absorber demonstrates outstanding electrical and sensing performances. Therefore, promoting enhanced resistive behavior and light-scattering effects, this innovative concept of optimized a-Si/Ti multilayer provides a sound pathway for designing promising alternative absorbers for the future development of a-Si-based TFSCs.

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Section: Morphological and Structural Characteristicssupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Absorption enhancement in amorphous Si by introducing RF sputtered Ti intermediate layers for photovoltaic applications

Ferhati

Djeffal

Boubiche

et al. 2021

Materials Science and Engineering: B

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show abstract

“…In addition, the films deposited at these conditions of RT and low pressures would show a compact structure die to the high deposition rate, favoring to a better structural quality and to the presence of such nc structures. However, as the Ar pressure raised, more collisions were promoted in the plasma between the energetic Ar ions and the sputtered atoms that would lose part of its energy impacting much softer on the surface substrate [ 22 ]. Thus, the atoms would have lower kinetic energy, not enough to achieve a crystalline structure.…”

Section: Resultsmentioning

confidence: 99%

Sputtered Non-Hydrogenated Amorphous Silicon as Alternative Absorber for Silicon Photovoltaic Technology

et al. 2021

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Non-hydrogenated amorphous-silicon films were deposited on glass substrates by Radio Frequency magnetron sputtering with the aim of being used as precursor of a low-cost absorber to replace the conventional silicon absorber in solar cells. Two Serie of samples were deposited varying the substrate temperature and the working gas pressure, ranged from 0.7 to 4.5 Pa. The first Serie was deposited at room temperature, and the second one, at 325 °C. Relatively high deposition rates above 10 Å/s were reached by varying both deposition temperature and working Argon gas pressure to ensure high manufacturing rates. After deposition, the precursor films were treated with a continuous-wave diode laser to achieve a crystallized material considered as the alternative light absorber. Firstly, the structural and optical properties of non-hydrogenated amorphous silicon precursor films were investigated by Raman spectroscopy, atomic force microscopy, X-ray diffraction, reflectance, and transmittance, respectively. Structural changes were observed in the as-deposited films at room temperature, suggesting an orderly structure within an amorphous silicon matrix; meanwhile, the films deposited at higher temperature pointed out an amorphous structure. Lastly, the effect of the precursor material’s deposition conditions, and the laser parameters used in the crystallization process on the quality and properties of the subsequent crystallized material was evaluated. The results showed a strong influence of deposition conditions used in the amorphous silicon precursor.

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Modification of Polyimide Surface in Multilayer Structures for Architectural Films by Plasmochemical Treatment

Sleptsov

Revenok

2020

VIII International Scientific Siberian Transport Forum

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A study of intrinsic amorphous silicon thin film deposited on flexible polymer substrates by magnetron sputtering

Cited by 11 publications

References 49 publications

Absorption enhancement in amorphous Si by introducing RF sputtered Ti intermediate layers for photovoltaic applications

Absorption enhancement in amorphous Si by introducing RF sputtered Ti intermediate layers for photovoltaic applications

Sputtered Non-Hydrogenated Amorphous Silicon as Alternative Absorber for Silicon Photovoltaic Technology

Modification of Polyimide Surface in Multilayer Structures for Architectural Films by Plasmochemical Treatment

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