A study of microstructural properties and quantum size effect in SILAR deposited nano-crystalline CdS thin films

Ashith, V.K.; Rao, Gowrish K.

doi:10.1016/j.tsf.2016.08.024

Cited by 14 publications

(4 citation statements)

References 18 publications

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“…No diffraction peaks of other impurities are found, indicating that the In 2 S 3 (9)/Ag 2 S(8)/TiO 2 NTAs composite material with high purity is synthesized. The films obtained by SILAR technology are often affected by factors such as the difference in thermal expansion coefficient between the film and the substrate and the differences in their crystal structures [35]. The crystallite sizes of In 2 S 3 and Ag 2 S can be obtained by Debye-Scherer's formula [36] ( ) D 0.9 cos , 1 l b q = where λ=1.54 Å, β is the peak width of the maximum half, and θ is the diffraction Angle.…”

Section: Crystal Structure and Microstructure Informationmentioning

confidence: 99%

A highly efficient In₂S₃/Ag₂S/TiO₂ NTAs photoelectrodes for photocathodic protection of Q235 carbon steel under visible light

Li¹,

Yang²,

Cui³

et al. 2022

Nanotechnology

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A novel In2S3/Ag2S/TiO2 nanotube arrays (NTAs) was successfully fabricated by successive ionic layer adsorption and reaction (SILAR) method and electrochemical anodic oxidation method, and served as photoanode for photocathodic protection application. The micromorphologies, optical absorption properties, crystalline structure and elemental valence states of the composites were performed by field emission scanning electron microscopy, high resolution transmission electron microscope, UV−vis diffuse reflectance absorption spectra, X-ray diffractometer and X-ray photoelectron spectroscopy, respectively. The photocathodic protection performances of In2S3/Ag2S/TiO2 NTAs on the Q235 carbon steel (CS) were also studied. The In2S3/Ag2S/TiO2 nanocomposites show better photoelectrocatalytic and photocathodic protection performance than pure TiO2 NTAs. The photocurrent density of In2S3(9)/Ag2S(8)/TiO2 photoelectrode coupled with Q235 CS reach 211 μA cm−2, which is about 4.5 times higher than that of TiO2 NTAs. The photogenerated potential of Q235 CS coupled to In2S3(9)/Ag2S(8)/TiO2 under illumination shows a negative shift to −0.92 V vs. SCE. Results indicate that the co-sensitization of In2S3 and Ag2S could extend the light absorption of TiO2 to the visible light range and enhance its photoelectric conversion efficiency.microscope, UV−vis diffuse reflectance absorption spectra, X-ray diffractometer and X-ray photoelectron spectroscopy, respectively. The photocathodic protection performances of In2S3/Ag2S/TiO2 NTAs on the Q235 carbon steel (CS) were also studied. The In2S3/Ag2S/TiO2 nanocomposites show better photoelectrocatalytic and photocathodic protection performance than pure TiO2 NTAs. The photocurrent density of In2S3(9)/Ag2S(8)/TiO2 photoelectrode coupled with Q235 CS reach 211 μA cm−2, which is about 4.5 times higher than that of TiO2 NTAs. The photogenerated potential of Q235 CS coupled to In2S3(9)/Ag2S(8)/TiO2 under illumination shows a negative shift to −0.92 V vs. SCE. Results indicate that the co-sensitization of In2S3 and Ag2S could extend the light absorption of TiO2 to the visible light range and enhance its photoelectric conversion efficiency.

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Section: Crystal Structure and Microstructure Informationmentioning

confidence: 99%

A highly efficient In₂S₃/Ag₂S/TiO₂ NTAs photoelectrodes for photocathodic protection of Q235 carbon steel under visible light

Li¹,

Yang²,

Cui³

et al. 2022

Nanotechnology

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“…The properties of CdS thin films can be tuned to suit various applications by introducing different amounts of other elements such as zinc. This technique has been used to obtain graded bandgap junctions and lattice matched heterostructures [8][9][10][11][12][13][14][15][16][17]. Theoretically, the bandgap of CdS films can be altered from 2.4 eV to 3.5 eV by introducing zinc in various ratios [10].…”

Section: Introductionmentioning

confidence: 99%

The effects of Zn incorporation on electrical, photoluminescence and spectral sensitivity of SILAR deposited CdS thin films

Ashitha¹,

Priya²,

Ali³

et al. 2020

Mater. Res. Express

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The SILAR deposited CdS films were incorporated with various concentrations of zinc using zinc acetate and zinc chloride precursors. The presence of zinc was found to alter the crystal structure and energy bandgap of the films. The bandgap increased by nearly 44% with the increase of zinc concentration in the films. The photoluminescence spectra of the films revealed the presence of several localized defects levels within the forbidden bandgap. The peak spectral response wavelength was found to vary from 500 nm to 400 nm with the increase of zinc. The photocurrent was found to increase with the Cd:Zn ratio. The films with relatively high concentrations of zinc were found to be better suited for the photodetector applications due to their higher photocurrent to dark current ratio.

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“…CdS is an n‐type semiconductor with a direct band gap of 2.4 eV, which falls in the visible spectrum at room temperature. Because of its wide band gap, CdS thin films are regarded as one of the most promising materials for heterojunction thin film solar cell; it has also immense potential applications in optoelectronics, such as photodetectors, LEDs, gas detectors, photovoltaic cells, and thin film transistors . One of the goals to improve the structural response of CdS is to increase its structural activity by doping with special atom.…”

Section: Introductionmentioning

confidence: 99%

“…Various techniques and methods have been applied to deposit doped CdS films such as thermal evaporation, chemical vapor deposition spray pyrolysis (SP), Silar, pulsed laser deposition, sol‐gel, and sputtering . Among all the techniques, the SP technique is best suited for Cd 0.8 Sn 0.2 S thin film deposition because it enables a low production cost of large area thin films and good adherence with easy intentional doping .…”

Section: Introductionmentioning

confidence: 99%

AC conductivity and dielectric studies of Cd_0.8Sn_0.2S thin films

Amroun

Khadraoui

2019

Int J Numerical Modelling

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Thin films of Cd 0.8 Sn 0.2 S were prepared by spray pyrolysis method. The Dc and Ac electrical conduction of Cd 0.8 Sn 0.2 S thin films was investigated in this work. Ac conductivity study of the prepared sample is reported in the frequency range 5 Hz to 13 MHz at various temperatures (300-343 K) using impedance spectroscopy. The Cole-Cole plot shows a single semicircle, indicating an equivalent circuit with a single parallel resistor R and capacitance C. Ac conductivity Ac(ω) is found to be proportional to ω s where s < 1. The value of s tends to decrease depending on the temperature. The temperature dependence of both the Ac conductivity and the parameter s is interpreted by the correlated barrier hopping (CBH) model. The temperature-dependent Dc conductivity and the relaxation frequency are found to obey the Arrhenius law having activation energy of 0.17 eV. The density of states at Fermi level is calculated and is of the order of 10 15 eV −1 ·cm −3 . Dielectric constant ε′ and dielectric loss ε″ were found to decrease with frequency and increase with temperature in the investigated ranges.

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A study of microstructural properties and quantum size effect in SILAR deposited nano-crystalline CdS thin films

Cited by 14 publications

References 18 publications

A highly efficient In₂S₃/Ag₂S/TiO₂ NTAs photoelectrodes for photocathodic protection of Q235 carbon steel under visible light

A highly efficient In₂S₃/Ag₂S/TiO₂ NTAs photoelectrodes for photocathodic protection of Q235 carbon steel under visible light

The effects of Zn incorporation on electrical, photoluminescence and spectral sensitivity of SILAR deposited CdS thin films

AC conductivity and dielectric studies of Cd_0.8Sn_0.2S thin films

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A study of microstructural properties and quantum size effect in SILAR deposited nano-crystalline CdS thin films

Cited by 14 publications

References 18 publications

A highly efficient In2S3/Ag2S/TiO2 NTAs photoelectrodes for photocathodic protection of Q235 carbon steel under visible light

A highly efficient In2S3/Ag2S/TiO2 NTAs photoelectrodes for photocathodic protection of Q235 carbon steel under visible light

The effects of Zn incorporation on electrical, photoluminescence and spectral sensitivity of SILAR deposited CdS thin films

AC conductivity and dielectric studies of Cd0.8Sn0.2S thin films

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A highly efficient In₂S₃/Ag₂S/TiO₂ NTAs photoelectrodes for photocathodic protection of Q235 carbon steel under visible light

A highly efficient In₂S₃/Ag₂S/TiO₂ NTAs photoelectrodes for photocathodic protection of Q235 carbon steel under visible light

AC conductivity and dielectric studies of Cd_0.8Sn_0.2S thin films