A study of nonequilibrium diffusion modeling-applications to rapid thermal annealing and advanced bipolar technologies

Baccus, B.; Wada, T.; Sato, Naoyuki; Norishima, M.; Nakajima, H.; Inou, K.; Iinuma, T.

doi:10.1109/16.123491

Cited by 42 publications

(6 citation statements)

References 36 publications

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“…In our model we consider, consistent with previous works [1,2,5], the boron-self-interstitial pair model. Starting from the reaction: B.…”

Section: Simulation Model Of Interstitial Aggregation and B-tedmentioning

confidence: 78%

“…Most technological processing technique produces point defects in the Si lattice, therefore, the dopant diffusion occurs under non equilibrium conditions. In these last years several diffusion models have been proposed based on coupled equations for defects, substitutional impurities and defect-impurity pairs [1][2][3][4][5]. The major problem associated with these approaches is the description of defect evolution during annealing.…”

Section: Introductionmentioning

confidence: 99%

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Effects of Interstitial Clustering on Transient Enhanced Diffusion of Boron in Silicon

Solmi¹,

Valmorri²

1996

MRS Proc.

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A simulation model for Boron diffusion which takes into account the aggregation of the excess interstitials in clusters, and subsequently, the dissolution of these defects, is proposed. The interstitial supersaturation and generation rate are determined according to the classical theory of nucleation and growth of particles, in analogy with the precipitation of a new phase in heavily doped silicon. The clusters are considered as precipitates formed by interstitial Si atoms. The B diffusion is modelled on the basis of the dopant-interstitial pair diffusion mechanism. The clusters dissolution during annealing maintains nearly constant, for a long period, the interstitial supersaturation and the related enhancement of the boron diffusion. This gives a good account of the diffusion results over a large range of experimental conditions. Furthermore, this approach describes most of the behavior of the transient enhanced diffusion (TED), like the temperature dependence of the level of the B diffusion enhancement, the dependence of the duration of the phenomenon on implanted dose, and the scarce dependence on the damage distribution in depth. The results of the simulations are compared with experimental data on the kinetics of interstitial cluster dissolution and of B TED.

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“…In our model we consider, consistent with previous works [1,2,5], the boron-self-interstitial pair model. Starting from the reaction: B.…”

Section: Simulation Model Of Interstitial Aggregation and B-tedmentioning

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Effects of Interstitial Clustering on Transient Enhanced Diffusion of Boron in Silicon

Solmi¹,

Valmorri²

1996

MRS Proc.

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“…[14][15][16][17][18][19][20][21] However, in these models, particular emphasis is devoted to consider the effects of the arsenic-vacancy complexes on diffusion and/or electrical deactivation, 19,20 but they do not predict the dopant accumulation near the surface. [14][15][16][17][18][19][20][21] However, in these models, particular emphasis is devoted to consider the effects of the arsenic-vacancy complexes on diffusion and/or electrical deactivation, 19,20 but they do not predict the dopant accumulation near the surface.…”

Section: Introductionmentioning

confidence: 99%

Arsenic uphill diffusion during shallow junction formation

Ferri

Solmi

Parisini

et al. 2006

Journal of Applied Physics

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Articles you may be interested inDeactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment J.The behavior during annealing of low-energy As-implanted Si have been investigated by comparing secondary ion mass spectrometry ͑SIMS͒ and simulated profiles. Z-contrast scanning transmission electron microscopy ͑STEM͒ imaging has also been used to determine the As local distribution in proximity of the sample surface. The implants have been performed with energies between 1 and 10 keV both through a thermally grown 11 nm thick oxide and without any oxide mask. SIMS and STEM profiles show, after short annealing at 800-1000°C, an As pileup in the first nanometers of the Si matrix in proximity of the SiO 2 / Si interface. We demonstrate that this phenomenon can be explained with a "Fickian" standard diffusion by assuming the presence of unspecified "dopant traps" near the SiO 2 / Si interface that cause a drastic reduction of the dopant able to diffuse inside the bulk. We have also verified that removing before annealing the superficial 4 nm of Si does not eliminate the As pileup. Different mechanisms proposed in literature to explain the uphill diffusion are discussed. Furthermore, the availability of a suitable simulation model allows us to evaluate the dopant diffusivity during the annealing and investigate the transient enhanced diffusion ͑TED͒ phenomena.

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“…In this model, however, not all-possible reactions between point defects and dopant defect pairs have been considered. Baccus [12], has suggested a general pair diffusion model. However, in his model there is still a huge number of unknown parameters.…”

Section: Introductionmentioning

confidence: 99%

The simple approach to determination of active diffused phosphorus density in silicon

Sasani¹

2004

Semicond. Phys. Quantum Electron. Optoelectron.

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The diffusion of Phosphorus in silicon using a POCl 3 source has been considered. In the base of Fair-Tsai model of P-diffusion an empirical equation for calculation of active diffused phosphorus density (Q el ), is proposed. In this equation, a relationship between (Q el ), diffusion time, temperature and junction depth of P-diffused layer (X j ), is presented. The value of sheet resistance (R s ), which is taken from theoretical determination at 900°C, has a good agreement with experimental result.

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A study of nonequilibrium diffusion modeling-applications to rapid thermal annealing and advanced bipolar technologies

Cited by 42 publications

References 36 publications

Effects of Interstitial Clustering on Transient Enhanced Diffusion of Boron in Silicon

Effects of Interstitial Clustering on Transient Enhanced Diffusion of Boron in Silicon

Arsenic uphill diffusion during shallow junction formation

The simple approach to determination of active diffused phosphorus density in silicon

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