A Study of Photophysics, Photoelectrical Properties, and Photoconductivity Relaxation Dynamics in the Case of Nanocrystalline Tin(II) Selenide Thin Films

Pejova, and Biljana; Tanuševski, Atanas

doi:10.1021/jp0766555

Cited by 53 publications

(51 citation statements)

References 99 publications

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“…Notably, few‐layer SnSe FETs also show a large current ON/OFF ratio (≈2 × 10 7 ) and the highest anisotropic ratio in the mobility (≈5.8) among all the reported 2D anisotropic materials . These significant properties equip SnSe with great potential in various electronic and optoelectronic applications, including solar cells, infrared optoelectronic devices, radiation detectors, polarity‐dependent memory switching devices, artificial synaptic devices, and spin‐transport devices . Thus far, the exploration of anisotropic properties in 2D SnSe has focused on thermoelectric properties, first‐principles theoretical calculations, linear optical absorption, Raman scattering, and electrical transport characteristics .…”

Section: Introductionmentioning

confidence: 99%

Anisotropic Nonlinear Optical Properties of a SnSe Flake and a Novel Perspective for the Application of All‐Optical Switching

Zhang

Ouyang

Miao

et al. 2019

Advanced Optical Materials

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applications, [4,[17][18][19] and therefore have aroused enthusiasm in researchers. Due to their high crystal structure symmetry, graphene, which has been well studied, and most TMDCs exhibit an inplane isotropic feature. However, a few 2D materials with a surprisingly low lattice symmetry, such as BP, tin selenide (SnSe), [20][21][22][23] gallium telluride (GaTe), [24] and rhenium disulfide (ReS 2 ), [17,[25][26][27][28] can also show significant anisotropic in-plane optical, electrical, and thermal properties. [17,20,[23][24][25]28] For instance, the charge carrier mobility, [18,29] photoemission, [30] and thermoelectric figure of merit (ZT) [31][32][33] of BP along the armchair direction are larger than those in the zigzag direction. In addition to anisotropy, BP also has a tunable thickness-dependent direct bandgap ranging from 0.3 to 1.5 eV, [12,13] filling the space between zero-gap graphene [1,2] and large-gap (1-2.5 eV) TMDCs. [4,34] Additionally, BP has a high carrier mobility (≈10 3 cm 2 V −1 s −1 ) [18] compared with TMDCs (10-200 cm 2 V −1 s −1 ). [4] Therefore, BP has been viewed as an alluring and ideal candidate for applications in field-effect transistors (FETs), [18,35] fast-response optical switches, [36] photovoltaic devices, [37] mid-infrared polarizers, and polarization sensors, [29] owing to its distinguished physical properties. Although BP exhibits great potential for various anisotropic optical, electronic, and optoelectronic high-performance devices, it degrades within a short time when exposed to oxygen and water vapor in air, causing difficulties in practical applications. Consequently, it is highly important to explore BP-like materials with appropriate properties including a narrow bandgap, high carrier mobility, air stability, and low cost.Regarded as a promising alternative to BP, SnSe also consists of a puckered honeycomb layered crystal structure similar to that in BP, exhibiting highly anisotropic valence bands, [23] a crystal-orientation-dependent high charge carrier mobility (≈10 3 cm 2 V −1 s −1 ), [38] and linear optical absorption. [39] Additionally, due to the narrow-bandgap semiconductor nature, the indirect bandgap of SnSe is ≈0.9 eV, [39][40][41][42] whereas its direct bandgap is ≈1.3 eV, [40,42] leading to optical transitions of SnSe The deceptively simple tin selenide (SnSe) film has emerged as an appealing 2D material with a narrow bandgap, high charge carrier mobility, and significant thermoelectric figure of merit. In particular, compared with most commonly investigated 2D materials, SnSe with a puckered honeycomb structure possesses a lower lattice symmetry, resulting in prominent in-plane anisotropy. Herein, with polarization-dependent Raman spectroscopy and polarization-dependent nonlinear absorption measurements, pronounced polarization-dependent nonlinear optical properties of a SnSe flake are demonstrated originating from the anisotropic optical transition probability of SnSe, which is confirmed by ultrafast polarization-dependent pump-probe experiments. Furt...

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Section: Introductionmentioning

confidence: 99%

Anisotropic Nonlinear Optical Properties of a SnSe Flake and a Novel Perspective for the Application of All‐Optical Switching

Zhang

Ouyang

Miao

et al. 2019

Advanced Optical Materials

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“…SnSe is of interest for a wide range of potential applications such as for memory switching devices [2,3], infrared optoelectronic devices [4,5], solar cells [6,7] and anode materials for rechargeable lithium batteries [8]. Zhao et al [1] recently reported that single-crystal SnSe exhibited a low thermal conductivity above room temperature resulting in a high thermoelectric figure of merit, ZT, of 2.6 at 923 K along the b-axis (ZT ¼S 2 σT/κ where S is the Seebeck coefficient, σ is the electrical conductivity, κ is the thermal conductivity and T is the absolute temperature).…”

Section: Introductionmentioning

confidence: 99%

Bottom-up processing and low temperature transport properties of polycrystalline SnSe

Wei

Lewis

et al. 2015

Journal of Solid State Chemistry

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a b s t r a c tA hydrothermal approach was employed to efficiently synthesize SnSe nanorods. The nanorods were consolidated into polycrystalline SnSe by spark plasma sintering for low temperature electrical and thermal properties characterization. The low temperature transport properties indicate semiconducting behavior with a typical dielectric temperature dependence of the thermal conductivity. The transport properties are discussed in light of the recent interest in this material for thermoelectric applications. The nanorod growth mechanism is also discussed in detail.

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“…Recently, motivated by its narrow band gap, layered structure and some other advantages, including natural abundance, low toxicity and chemical stability, research interests in SnSe nanomaterial have been dramatically growing. Various SnSe nanostructures, including thin films [14,16], nanocrystals [17], and layered nanosheets [18], have been investigated. However, very few works on the synthesis of one-dimensional (1D) SnSe nanostructure arrays have been reported, and all of them adopt the chemical solution method [15,16].…”

Section: Introductionmentioning

confidence: 99%

Vertical SnSe nanorod arrays: from controlled synthesis and growth mechanism to thermistor and photoresistor

Cao¹,

Wang²,

Zhan³

et al. 2014

Nanotechnology

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We demonstrate that high-quality vertically aligned SnSe nanorod (NR) arrays have been synthesized via a facile chemical vapor deposition method on SiO₂ substrates using Bi powder as catalysts. Both SEM and TEM measurements reveal that this kind of SnSe NR consists of a one-dimensional core and dense two-dimensional branches. Thermistors and photoresistors have been fabricated in situ by directly depositing silver paint on the growth substrates. The thermistor shows the great merits of a broad temperature range (77-390 K), linear input-output characteristic, suitable thermal index and high sensitivity. The photoresistor device exhibits relatively fast response time, linear input-output, high reversibility and stability. In addition, both of the devices have the advantages of low cost, environment-friendliness and easy fabrication. The high performance of SnSe thermistors and photodetectors will make SnSe material promising in industrial multi-function nanodevices.

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A Study of Photophysics, Photoelectrical Properties, and Photoconductivity Relaxation Dynamics in the Case of Nanocrystalline Tin(II) Selenide Thin Films

Cited by 53 publications

References 99 publications

Anisotropic Nonlinear Optical Properties of a SnSe Flake and a Novel Perspective for the Application of All‐Optical Switching

Anisotropic Nonlinear Optical Properties of a SnSe Flake and a Novel Perspective for the Application of All‐Optical Switching

Bottom-up processing and low temperature transport properties of polycrystalline SnSe

Vertical SnSe nanorod arrays: from controlled synthesis and growth mechanism to thermistor and photoresistor

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