A Study of Photoresist Pattern Freezing for Double Imaging using 172nm VUV Flood Exposure

Yamaguchi, Masanori; Wallow, Thomas I.; Yamada, Yohei; Kim, Ryoung-Han; Kye, Jongwook; Levinson, Harry

doi:10.2494/photopolymer.21.697

Cited by 11 publications

(14 citation statements)

References 26 publications

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“…In a previous report, 16 we demonstrated that 172-nm cure stabilization, when properly implemented, can result in superior retention of photoresist profiles compared with broadband UV curing. For the commercial 193-nm resist studied, we reported that 172-nm cure dose and postcure bake must be chosen judiciously.…”

Section: Introductionmentioning

confidence: 81%

“…In a previous study, 16 we documented elbow corner tilting and displacement using both top-down and tilt-SEM methods. Although both methods indicated the presence of corner tilt and displacements, we note here that the top-down SEM images have proven particularly challenging to interpret quantitatively, and that tilt-SEM methods appear to yield results that are proportionally consistent with both line-end pullback measurements and in good agreement with FEA simulations ͑see Sec.…”

Section: Elbow Distortionmentioning

confidence: 99%

“…[13][14][15][16]18,[20][21][22][23][27][28][29][30][31][32][33][34] For double imaging generality, any pattern distortions need to be assessed for severity and possible correction within a given set of design rule constraints. To date, the majority of double imaging implementations have been demonstrated using highly regular structures such as pitch-split line/space arrays or crossed-grid contact hole arrays.…”

Section: Impacts On Double Imaging Utilitymentioning

confidence: 99%

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Cure-induced photoresist distortions in double patterning

Wallow

Rayasam

Yamaguchi

et al. 2009

J. Micro/Nanolith. MEMS MOEMS

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Many processes are under evaluation as simplifications to current double patterning methods. Reduction in process complexity and cost may be achieved by use of track-based photoresist stabilization methods that eliminate one etch step by allowing a second resist to be patterned over a first resist. Examples of stabilization methods using numerous curing processes have been reported. At least some resist shrinkage during stabilization appears to be generally observed for these methods. We evaluate the link between shrinkage and three-dimensional pattern distortions at line ends and elbow corners using experimental and simulation-based methods. A 172-nm UV resist curing process was used to produce controlled shrinkage ranging from 5% to 30%: shrinkage was correlated with resist distortions. At cure dose sufficient to stabilize the resist, shrinkage of approximately 23% results in measured line-end pullback and elbow displacement of approximately 16% and 13% of nominal linewidth respectively, when measured at resist half-height. Finite element analysis of resist beam structures produces shrinkage distortions that are in good qualitative and semiquantitative agreement with these measurements and thus appears to provide a provisionally general and useful method for predicting pattern distortions that arise during cure-based resist stabilization methods used in double imaging.

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Section: Introductionmentioning

confidence: 81%

Section: Elbow Distortionmentioning

confidence: 99%

Section: Impacts On Double Imaging Utilitymentioning

confidence: 99%

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Cure-induced photoresist distortions in double patterning

Wallow

Rayasam

Yamaguchi

et al. 2009

J. Micro/Nanolith. MEMS MOEMS

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“…A parallel set of studies developed fundamental linkages between shrinkage and distortion, and highlighted the need for curable resist materials with very low cure shrinkage. 15,16 Here, we show that use of resist materials designed for cure can greatly improve the lithographic performance of the 172 nm based process. We have developed new curable resists with low shrinkage and found that these materials are readily capable of patterning cross-grid contact holes at lithographic k 1 = 0.28, well beyond the practical k 1 limit for singleexposure contact patterning.…”

Section: Introductionmentioning

confidence: 88%

“…13,15,16,18 To assess shrinkage in XP-7600A, we have employed the exposure latitude curve offset approach described elsewhere. [14][15][16] This method allows estimation of shrinkage for all CDs within an exposure latitude range of interest for a given line-space target. Results for XP-7600A are summarized in Fig.…”

Section: Resist Shrinkage During Cure Processingmentioning

confidence: 99%

Photoresist stabilization for double patterning using 172 nm photoresist curing

Wallow

Dai²,

Szmanda³

et al. 2009

Advances in Resist Materials and Processing Technology XXVI

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We describe progress in low-k 1 factor double patterning using 172 nm ultraviolet (UV) curing as a resist stabilization method. Factors that have contributed to enhanced patterning capability include a) resists design and optimization for both patterning and UV curing; b) use of unique R&D tooling capabilities to rapidly identify and optimize key process variables; c) development of simple process metrics for characterizing double patterning process quality, and d) use of 172 nm-resistant antireflective materials. A designed resist, XP-7600A, was selected for detailed evaluation based on superior patterning and curing behavior (less than 10 percent volumetric shrinkage during cure.) Process optimization on 172 nm damage-prone antireflective coatings produced 60 nm cross-grid contact holes at 0.93 NA (litho k 1 = 0.28) with good uniformity when an ancillary 150 o C post-UV bake was used. Additional optimization on improved antireflective coatings yielded superior process latitude (>20 percent 172 nm dose latitude) and also demonstrated that a UV-cure-only resist stabilization process flow may be attainable. Under optimized conditions, highly uniform 60 nm half-pitch cross-grid contacts with cross-sectional area uniformity (1σ) of approximately 200 nm 2 (5 percent) are produced at 135 nm resist film thickness.

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Pattern Roughness Mitigation of 22 nm Lines and Spaces: The Impact of a H₂Plasma Treatment

Schepper

Pret²,

Otell

et al. 2014

Plasma Process. Polym.

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As the semiconductor industry pursues Moore's law, the demand to obtain smaller features continues. Extreme ultraviolet (EUV) lithography remains one of the primary options for sub‐20 nm patterns. However, the technology struggles to meet the line width roughness (LWR) specifications. In this article, we present the significance of plasma treatment as a roughness smoothing technique. Two EUV photoresists with 22 nm lines are exposed to various plasma processes. We highlight the advantages of a hydrogen plasma treatment and its vacuum ultraviolet (VUV) emission as an optimal smoothing process and discuss the effect of photoresist thickness, initial LWR and the VUV plasma emission. Even though a H2 plasma treatment results in a successful reduction of LWR/LER, the target value of below 2nm is not yet achieved.

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A Study of Photoresist Pattern Freezing for Double Imaging using 172nm VUV Flood Exposure

Cited by 11 publications

References 26 publications

Cure-induced photoresist distortions in double patterning

Cure-induced photoresist distortions in double patterning

Photoresist stabilization for double patterning using 172 nm photoresist curing

Pattern Roughness Mitigation of 22 nm Lines and Spaces: The Impact of a H₂Plasma Treatment

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A Study of Photoresist Pattern Freezing for Double Imaging using 172nm VUV Flood Exposure

Cited by 11 publications

References 26 publications

Cure-induced photoresist distortions in double patterning

Cure-induced photoresist distortions in double patterning

Photoresist stabilization for double patterning using 172 nm photoresist curing

Pattern Roughness Mitigation of 22 nm Lines and Spaces: The Impact of a H2Plasma Treatment

Contact Info

Product

Resources

About

Pattern Roughness Mitigation of 22 nm Lines and Spaces: The Impact of a H₂Plasma Treatment