A study of sputter deposited silicon films

Xü, Yao; Huang, Ruey‐Shing; Rigby, G.A.

doi:10.1007/bf02660469

Cited by 5 publications

(5 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The absence of any Si peak in both XRD and TEM confirmed that the Si layers in our multilayers are amorphous. Such amorphous nature of Si films is reported by some authors [8].…”

Section: Fe/si Multilayerssupporting

confidence: 68%

See 1 more Smart Citation

Magnetic and magnetotransport properties of metallic multilayers

Kumar¹

2012

AIP Conference Proceedings

View full text Add to dashboard Cite

Magnetic and magnetotransport studies carried out on Dy/Fe, Fe/Si and Co/Cu multilayers are presented. In the case of the Dy/Fe multilayers, the Fe layer is normal ferromagnetic and Dy layer is superparamagnetic. M-H curves measured at 4.2 K showed that the ferromagnetic contribution is almost absent. Zero field cooled and field cooled magnetization measurements also does show any transition at the Neel and Curie temperatures confirming the superparamagnetic behaviour. In Fe/Si multilayers, the magnetization behaviour is correlated with the decreasing thickness of the Fe layers. Hall resistance was also obtained as a function of the Fe layer thickness. Studies on the Co/Cu multilayers showed that the peaks in the magnetoresistance data occurred at larger magnetic fields than the coercivity of the samples.

show abstract

“…The absence of any Si peak in both XRD and TEM confirmed that the Si layers in our multilayers are amorphous. Such amorphous nature of Si films is reported by some authors [8].…”

Section: Fe/si Multilayerssupporting

confidence: 68%

“…Transition metal/semiconductor heterostructure multilayers such as Fe/Si show fascinating magnetic and spin dependent scattering properties [6][7][8]. These heterostructures have large potential applications in the rapidly emerging area of spintronics.…”

Section: Fe/si Multilayersmentioning

confidence: 99%

Magnetic and magnetotransport properties of metallic multilayers

Kumar¹

2012

AIP Conference Proceedings

View full text Add to dashboard Cite

show abstract

“…After the thermal annealing at 850 • C, a reduction of about 5% of the Si-film thickness is observed, which results in t ann Si = 200 ± 10 nm. This is due to the densification and the amorphous-topolycrystalline phase transition of the silicon thin film during the high-temperature annealing [51].…”

Section: -2mentioning

confidence: 99%

All-Dielectric Silicon Nanoslots forEr3+Photoluminescence Enhancement

Kalinic¹,

Cesca²,

Mignuzzi

et al. 2020

Phys. Rev. Applied

View full text Add to dashboard Cite

We study, both experimentally and theoretically, the modification of Er 3+ photoluminescence properties in Si dielectric nanoslots. The ultrathin nanoslot (down to 5-nm thickness), filled with Er in SiO 2 , boosts the electric and magnetic local density of states via coherent near-field interaction. We report an experimental 20-fold enhancement of the radiative decay rate with negligible losses. Moreover, via modifying the geometry of the all-dielectric nanoslot, the outcoupling of the emitted radiation to the far field can be strongly improved, without affecting the strong decay-rate enhancement given by the nanoslot structure. Indeed, for a periodic square array of slotted nanopillars an almost one-order-of-magnitude-higher Er 3+ PL intensity is measured with respect to the unpatterned structures. This has a direct impact on the design of more efficient CMOS-compatible light sources operating at telecom wavelengths.

show abstract

“…The experimental setup is described in [20]. The crystalline plate was fabricated via anisotropic wet etching procedures [21], while the amorphous plate was produced by sputtering deposition of silicon onto a dedicated substrate, followed by anisotropic wet-chemical erosion to arrive at a thin amorphous plate surrounded by a bulky Si frame for mechanical stability [22]. Thickness was 34.2 ± 0.2 µm for the crystal plate and 32.76 ± 0.09 µm for the amorphous one.…”

Section: Direct Observation Of Css Effect Was Carried Out At the Main...mentioning

confidence: 99%

Broad angular anisotropy of multiple scattering in a Si crystal

et al. 2020

View full text Add to dashboard Cite

We observed reduction of multiple Coulomb scattering of 855 MeV electrons within a Si crystalline plate w.r.t. an amorphous plate with the same mass thickness. The reduction owed to complete or partial suppression of the coherent part of multiple scattering in a crystal vs crystal orientation with the beam. Experimental data were collected at Mainz Mikrotron and critically compared to theoretical predictions and Monte Carlo simulations. Our results highlighted maximal 7 % reduction of the r.m.s. scattering angle at certain beam alignment with the [100] crystal axes. However, partial reduction was recorded over a wide range of alignment of the electron beam with the crystal up to 15 deg. This evidence may be relevant to refine the modelling of multiple scattering in crystals for currently used software, which is interesting for detectors in nuclear, medical, high energy physics.

show abstract

A study of sputter deposited silicon films

Cited by 5 publications

References 21 publications

Magnetic and magnetotransport properties of metallic multilayers

Magnetic and magnetotransport properties of metallic multilayers

All-Dielectric Silicon Nanoslots forEr3+Photoluminescence Enhancement

Broad angular anisotropy of multiple scattering in a Si crystal

Contact Info

Product

Resources

About