A Study of the Deactivation of High Concentration, Laser Annealed Dopant Profiles in Silicon

Takamura, Yayoi; Jain, S.; Griffin, P.B.; Plummer, J.D.

doi:10.1557/proc-669-j7.3

Cited by 11 publications

(7 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The electron loss mechanism of electrical-assisted diffusion also can explain why p-type doping shows less deactivation phenomenon than n-type doping because hole has positive charge and shows an opposite effect to electron on electricalassisted diffusion. This phenomenon will be demonstrated and discussed in Section II-B, and had been shown in [17]- [21]. Significant reactivation occurs at 3RTP 1000°C/20 s. R S decreases −66.8% referring to 2Anneal, and a net R S decreases −25.2%, referring to 1RTP.…”

Section: A N-type Implants (Ph 3 and Ash 3 Plad)supporting

confidence: 52%

See 1 more Smart Citation

Electrical Activation, Deactivation, and Reactivation Mechanism Study of Plasma Doping Processes

Qin

2015

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Advanced doping techniques in low-energy high-dose regimes including n-type PH 3 and AsH 3 plasma doping (PLAD) and p-type B 2 H 6 and BF 3 PLAD are studied and characterized on the electrical activation, deactivation, and reactivation mechanisms. Because deactivation and reactivation characteristics are independent of ion species and dependent only on the carrier, electrical-assisted diffusion of carriers (trap in native oxide) is confirmed as a hypothesis of a major dopant deactivation kinetics. Secondary ion mass spectrometry/ angle-resolved X-ray photoelectron spectroscopy and Hall methods are used in this paper to supply more supporting evidence and data. With characteristics similar to those of beam-line (BL)-based implants, n-type PLAD shows more serious deactivation than p-type PLAD. n-type PLAD shows a more significant reactivation effect than their BL implant counterparts. According to the deactivation mechanism study, a solution was proposed and used to reduce the deactivation issue for nMOS devices.

show abstract

Section: A N-type Implants (Ph 3 and Ash 3 Plad)supporting

confidence: 52%

“…The phenomenon of the p-type doping showing less deactivation than n-type doping had been published elsewhere [17]- [21].…”

Section: B P-type Implants (B 2 H 6 and Bf 3 Plad)mentioning

confidence: 99%

Electrical Activation, Deactivation, and Reactivation Mechanism Study of Plasma Doping Processes

Qin

2015

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…[6][7][8][9][10][11][12] This deactivation is thought to be driven by the release of silicon interstitials from end-of-range ͑EOR͒ defects that evolve through nonconservative Ostwald ripening during annealing. 13 The interstitials flow towards the surface and decorate the boron profile, producing boron interstitial clusters.…”

mentioning

confidence: 99%

“…[2][3][4][5] A problem exists with creating highly active profiles when boron is implanted in conjunction with a preamorphizing germanium implant; deactivation occurs during postactivation thermal processes. [6][7][8][9][10][11][12] This deactivation is thought to be driven by the release of silicon interstitials from end-of-range ͑EOR͒ defects that evolve through nonconservative Ostwald ripening during annealing. 13 The interstitials flow towards the surface and decorate the boron profile, producing boron interstitial clusters.…”

mentioning

confidence: 99%

Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans

Sharp

Cowern

Webb

et al. 2006

Applied Physics Letters

View full text Add to dashboard Cite

Electrical activation and redistribution of 500 eV boron implants in preamorphized silicon after nonmelt laser annealing at 1150°C and isochronal rapid thermal postannealing are reported. Under the thermal conditions used for a nonmelt laser at 1150°C, a substantial residue of end-of-range defects remained after one laser scan but these were mainly dissolved within ten scans. The authors find dramatic boron deactivation and transient enhanced diffusion after postannealing the one-scan samples, but very little in the five-and ten-scan samples. The results show that end-of-range defect removal during nonmelt laser annealing is an achievable method for the stabilization of highly activated boron profiles in preamorphized silicon. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2385215͔The continued downscaling of complementary metaloxide-semiconductor devices requires ultrashallow and abrupt source/drain extension regions with a low sheet resistance.1 Among the other processes nonmelt laser annealing has gained attention as a means of achieving these requirements by its short process time and high annealing temperature, and hence low thermal budget, resulting in high dopant solubility.2-5 A problem exists with creating highly active profiles when boron is implanted in conjunction with a preamorphizing germanium implant; deactivation occurs during postactivation thermal processes. [6][7][8][9][10][11][12] This deactivation is thought to be driven by the release of silicon interstitials from end-of-range ͑EOR͒ defects that evolve through nonconservative Ostwald ripening during annealing. 13 The interstitials flow towards the surface and decorate the boron profile, producing boron interstitial clusters. [14][15][16][17] In this letter, multiple laser scan annealing at 1150°C followed by isochronal rapid thermal postannealing at lower temperatures is used to investigate the role of end-of-range defects in the redistribution and deactivation of ultrashallow B profiles in preamorphized and nonmelt laser-annealed silicon.N-type ͑100͒ Czochralski-silicon wafers were preamorphized with 5 keV Ge + to a dose of 1 ϫ 10 15 cm −2 producing a surface amorphous layer to a depth of ϳ15 nm. 500 eV B + was implanted into the amorphous layer to a dose of 1 ϫ 10 15 cm −2 . Both implants were made using an Applied Materials Quantum X implanter. The wafers were exposed to a scanning diode laser source operated under nonmelting conditions, which was used to anneal three strips across the wafers, corresponding to one, five, or ten scans at a temperature of 1150°C. By using multiple laser scans to anneal the wafer, it allows a study of defect evolution as a function of increasing the thermal budget. The amorphous layer regrew by solid phase epitaxial regrowth during the annealing. Samples were taken from these strips and annealed in dry N 2 for 60 s at temperatures ranging from 700 to 1000°C using a Process Products Corporation rapid thermal annealing system operating with a 50°C/s heating ramp rate. The van der Pauw technique was use...

show abstract

“…The electron loss mechanism of electrical-assisted diffusion also can explain why p-type doping shows less deactivation phenomenon than n-type doping because hole has positive charge and shows an opposite effect to electron on electrical-assisted diffusion. This phenomenon will be demonstrated in Section II-B, and had been shown in [16] and [17]. Significant reactivation occurs at 3RTP 1000°C/20 s. R S decreases 25.3% referring to 2Anneal, and a net R S decreases 11.1%, referring to 1RTP.…”

Section: A Phosphorus Implantsmentioning

confidence: 51%

Characterization of the Depth Distribution and Electrical Activation and Deactivation of Ion Implanted Dopants in Silicon

Qin

2014

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Electrical-assisted diffusion of carriers is proposed as a hypothesis of major dopant deactivation kinetics. New metrology methods, including SIMS/ARXPS and continuous anodic oxidation technique/differential Hall effect methods, are used in this paper to supply supporting evidences and data. The n-type (P-and As-based) implants show more serious deactivation, but similar reactivation to p-type (B-based) implants, which can be interpreted by the electrical-assisted diffusion mechanism. Reactivation occurs only when the excess dopants exist-dopant concentration is higher than its electrically active solid solubility limit.

show abstract

A Study of the Deactivation of High Concentration, Laser Annealed Dopant Profiles in Silicon

Cited by 11 publications

References 12 publications

Electrical Activation, Deactivation, and Reactivation Mechanism Study of Plasma Doping Processes

Electrical Activation, Deactivation, and Reactivation Mechanism Study of Plasma Doping Processes

Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans

Characterization of the Depth Distribution and Electrical Activation and Deactivation of Ion Implanted Dopants in Silicon

Contact Info

Product

Resources

About