A Study of the Effectiveness of Tin on the Thermal Conductivity Coefficient and Electrical Resistance of Se60Te40-xSnx Chalcogenide Glass

Abstract

This research calculated the effect of partial replacement of Trillium with tin by weight ratios x=0, 5, 10, 15, and 20 of the weight of manufactured samples on the thermal conductivity coefficient of Se60Te40-xSnx chalcogenide glasses. The thermal conductivity coefficient of the samples was calculated using a disk- Lee. The results showed that increasing the concentration of tin improves the thermal insulation ability by decreasing the thermal conductivity value and then determining the optimal weight ratios at which a large thermal insulation is obtained. The electrical resistivity as a function of temperature was studied. The electrical resistivity (rd.c) was calculated as a function of temperature for all samples, using two-point probe techniques in the dark electrical resistivity measurements of Se60Te40-xSnx glasses for all values made in the temperature range 303-455 K. The electrical resistivity was found that it depends on the change in Tin addition, the temperature is clearly affected by the increase in the concentration of tin in the alloy. The electrical resistance increases when the concentration of Tin increase of Se60Te40-xSnx

Calculation of the localized and extended energy states density for Ge60Se40-xTex alloy prepared by melting point method

“…The tail of the conduction band changes due to the increase or decrease of the types of bonds present in the alloy [9,16]. Our findings, which are presented in Table 2, demonstrate how the broadening may not be symmetrical with the valence band and may result in an increase or decrease in the conduction band edge, which affects both the local state density N (E loc ) and extended states N (E ext ) at the Fermi N level (E F ).…”

“…; these states are extended localized and fermi level. [9,10] Calculating the width of each band state from these equations:…”

The Effect of Partial Substitution of Ge-S-Cd Alloys on the Density of Energy States

“…Compared to those, atoms can have greater energy than those located near (adjacent) to electrically charged atoms. In addition, the conduction band's tail changes due to the increase or decrease of the types of bonds present in the alloy [24,25], and the broadening may not be symmetrical with the valence band and may lead to an increase or decrease in the edge of the conduction band, which affects both the density of localized state N(Eloc), extended state N(Eext) at the Fermi level N(EF), as seen in our results listed in Table 2.…”

“…The inherent complexity of highly disordered materials prevents structural characterization and theoretical modeling, which is why glass science advancements lag behind those in crystallography [9]. As of now, Ge-As-Se waveguides [12], As2S3 and As2Se3 fibers [10], and As2Se3 are the main chalcogenides that have been used to generate state-of-the-art MIR( SCs).…”