A Study of the Effects Limiting the Responsivity of A Broadband THz Power Detector with On-chip Antenna in $0.13\mu \mathrm{m}$ SiGe HBT Technology

Shabanzadeh, Negar; Nokandi, Mostafa Jafari; Rasilainen, Kimmo; Chen, Jiangcheng; Singh, Sumit; Pärssinen, Aarno; Rahkonen, Timo

doi:10.1109/norcas57515.2022.9934190

Cited by 4 publications

(1 citation statement)

References 8 publications

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“…The principle behind THz radiation detection in a FET device beyond its cut-off frequency is based on the nonlinear properties of the transistor [7,8]. Different types of FETs, such as Schottky diodes [9], Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) [10][11][12][13], Heterostructure Bipolar Transistors (HBTs) [14,15], and High Electron Mobility Transistors (HEMTs) (e.g. GaAs-based commercial HEMTs [16], nitride-based HEMTs [17,18], and gated double quantum well heterostructures [19]) were used to detect the THz radiation.…”

Section: Introductionmentioning

confidence: 99%

Review on Physics and Modelling of THz Radiation Detection Using Field-effect Transistors

kelanee,

Ibrahim,

El Zayat

et al. 2023

Labyrinth: Fayoum Journal of Science and Interdisciplinary Stud

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Despite the advantages of semiconductor field-effect transistors (FETs), they have yet to show competing responses in terahertz (THz) radiation detection compared to other techniques. It is therefore important to improve our understanding of the FET operation when detecting THz radiation beyond its cut-off frequency. The journey of modeling THz detection in FET started with the plasma wave model by Dyaknov and Shur and proceeded to other approaches to develop a physicsbased model of the FET nonlinearity that drives the high-frequency rectification. This work presented a review of the models developed to model the operation of FEET detectors. The common factors as well as the advantages of each model are emphasized. The more we understand these models, the better we can guide the development of FET designs for higher detection responses.

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