A study of the formation of yttrium silicides epitaxially grown on Si(111)

Rogero, Celia; Polop, C.; Sacedón, J. L.; Gago, José Ángel Martín

doi:10.1002/sia.1874

Cited by 5 publications

(4 citation statements)

References 18 publications

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“…The chamber is equipped with LEED optics, CMA for Auger electron spectroscopy ͑AES͒, and an STM working at RT. The combination of these techniques allows us to study the composition of the epitaxial layers, their surface morphology, 36 and the atomic structure on the grown films. The base pressure was in the low 10 −10 mbar, raising to 2 ϫ 10 −9 mbar during the Y evaporation.…”

Section: Experimental and Theoretical Detailsmentioning

confidence: 99%

“…To form the 3D silicide, solid-phase epitaxy was used. 36 The Y atoms were evaporated by electron bombardment and deposited at RT on the Si͑111͒ 7 ϫ 7 surface ͑the evaporation rate was monitored with a quartz balance͒. Samples were then annealed at 420°C for 10 minutes resulting in a silicide, characterized by a sharp ͑ ͱ 3 ϫ ͱ 3͒R30°L EED pattern.…”

Section: Experimental and Theoretical Detailsmentioning

confidence: 99%

“…Preparation conditions were previously optimized, in order to obtain surfaces with large and flat terraces. 36 A computer controlled 8 bits CCD camera has been used to collect the LEED IV curves. 12,37 The spectra were recorded at room temperature and at normal incidence in an energy range from 50 to 450 eV, in 0.5 eV steps.…”

Section: Experimental and Theoretical Detailsmentioning

confidence: 99%

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Surface atomic structure determination of three-dimensional yttrium silicide epitaxially grown on Si(111)

2005

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The surface atomic structure of thin layers of three-dimensional yttrium silicide epitaxially grown on Si͑111͒ 7 ϫ 7 has been investigated by means of dynamical low-energy electron diffraction analysis. We determine the interlayer distances as well as the lateral and/or vertical relaxations of the atoms in the superficial planes. The epitaxial silicide consists of stacked hexagonal rare-earth planes and graphitelike Si planes with an ordered arrangement of Si vacancies. The ordered net of Si vacancies in the inner planes is responsible for the lateral relaxations of the surrounding Si atoms. The topmost layer does not present a graphitelike structure, forming a buckled Si layer with no vacancies. One of the three Si atoms in the lower plane of this bilayer is closer to the yttrium layer due to the presence of the vacancy in the last Si plane just below. This produces vertical relaxation in the termination layer.

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Section: Experimental and Theoretical Detailsmentioning

confidence: 99%

Section: Experimental and Theoretical Detailsmentioning

confidence: 99%

Section: Experimental and Theoretical Detailsmentioning

confidence: 99%

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Surface atomic structure determination of three-dimensional yttrium silicide epitaxially grown on Si(111)

2005

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“…Their preparation procedure is explained elsewhere. 18 Basically, Y films deposited on Si͑111͒ were annealed at 420°C for 5 min, resulting in an epitaxially grown silicide, characterized by a sharp ͑ ͱ 3 ϫ ͱ 3͒R30 ‫ؠ‬ LEED pattern. The film thickness ranged from 5 to 10 monolayers, thus ensuring bulklike behavior for the silicide film.…”

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confidence: 99%

Subsurface structure of epitaxial rare-earth silicides imaged by STM

2006

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We combine scanning tunneling microscopy ͑STM͒ images, density functional theory total energy calculations, and STM simulations to conclusively determine the surface structure of the Y 3 Si 5 ͑0001͒ silicide epitaxially grown on Si͑111͒. We observe, for the same sample, two different types of atomic resolution images exhibiting either p3m or p6 symmetry, in analogy with previous works on similar rare-earth silicide surfaces. We elucidate the long-standing controversy regarding the interpretation of these images by showing that they are mainly related to the registry of the surfacemost Si bilayer with respect to the Si vacancy network located two layers below the surface and, therefore, to the existence of two different buried structural domains. Our results demonstrate an unsual STM depth sensitivity-up to 5 Å-for metallic systems.

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