A study of the growth-mechanism and properties of microcrystalline silicon–germanium

Transport properties of nanocrystalline silicon and silicon–germanium

“…Ganguly et al, [56] performed systematics study of effect of PECVD deposition parameters on µc-(Si,Ge):H like hydrogen dilution, power, pressure and temperature. From the studies of grain size versus hydrogen dilution done at different temperatures, it was found that at each temperature there is an optimum hydrogen dilution for maximum grain size, as shown in Figure2.14.…”

“…This means hydrogen provides alternative source of energy at low H respectively as function of hydrogen dilution at 250 • C using different pressures [56] temperatures leading to the formation of bigger crystals. Beyond the optimum dilution, the detrimental effect of hydrogen is reversed at higher temperature which means that the rate of dissociation of Si − Si bond by H + 2 is dominated by thermal desorption of the hydrogen from…”

Study of electronic characteristics of heterojunction with intrinsic thin-layer devices and defect density profile of nanocrystalline silicon germanium devices

“…A study on the growth of nc-SiGe:H was carried out by Ganguly et al [54] while varying the PECVD parameters such as the power, hydrogen dilution, temperature, and pressure. They found that there is an optimum hydrogen dilution to achieve the largest grain size for each temperature, shown in Figure 3.2.…”

“…Grain sizes vs. hydrogen dilution for nc-SiGe:H samples deposited at (a) 0.5mT, 89mW/cm 2 and (b) 0.9mT, 637mW/cm 2 at different temperatures[54] …”

“…Grain sizes versus hydrogen dilution for (a) nc-Si:H and (b) nc-SiGe:H deposited at 250°C[54] Houben et al reported on the Raman spectra of nc-SiGe:H PECVD films for varying Ge content[56], shown inFigure 3.4. They concluded that high content of Ge results in good crystallinity of the Ge-Ge crystals.…”