1999
DOI: 10.1039/a902688f
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A study of the mechanism of the reaction of trimethylgallium with hydrogen selenide

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Cited by 6 publications
(2 citation statements)
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“…This discrepancy is discussed elsewhere. 57 The conclusion is, however in agreement with those of Benson, who has suggested that current kinetic interpretations of the pyrolysis of alkyl sul®des, disul®des and mercaptans are all seriously in error. 58 The most serious errors have to do with the presumed four-centre b-hydride elimination reaction 59,60 of either H 2 S from RSH or RSH from R 2 S. He suggests that this reaction may be too slow to be important in pyrolysis and this indeed has been found from both DFT and MP2 calculations for both sulfur and selenium centred alkyls and alkyl hydrides, 38 viz.…”
Section: Decomposition Of D 18 -Bu T 2 Sesupporting
confidence: 83%
“…This discrepancy is discussed elsewhere. 57 The conclusion is, however in agreement with those of Benson, who has suggested that current kinetic interpretations of the pyrolysis of alkyl sul®des, disul®des and mercaptans are all seriously in error. 58 The most serious errors have to do with the presumed four-centre b-hydride elimination reaction 59,60 of either H 2 S from RSH or RSH from R 2 S. He suggests that this reaction may be too slow to be important in pyrolysis and this indeed has been found from both DFT and MP2 calculations for both sulfur and selenium centred alkyls and alkyl hydrides, 38 viz.…”
Section: Decomposition Of D 18 -Bu T 2 Sesupporting
confidence: 83%
“…Additionally, high reactor pressure reduces the mean free path of precursor species and low gas velocity increases the gas residence time, both of which are likely to increase the possibility of gas-phase pre-reaction of precursors before they reach the substrate. Although these phenomena may not affect the current CVD/ MOCVD processes using precursors such as Mo(CO) 6 and W(CO) 6 -as they will not lose all the CO ligands before reaching the substrate surface-other precursors such as trimethylgallium and H 2 Se for GaSe films can have significant gas phase pre-reaction due to the Lewis acid and base properties of the two precursors [137,138]. In contrast, high gas flow rate and low reactor pressure can reduce the gas recirculation (figure 4(e)) and precursor pre-reaction, however, this will also lead to change in temperature profile (figures 4(d) and (g)) and reduction in precursor partial pressure.…”
Section: Modeling Gas Source-cvd Growth Chambersmentioning
confidence: 99%