A study of the structure of an Aln-based ceramic obtained from ultrafine powders

Artemova, K. K.; Соловьева, А. Е.; Sukacheva, O. I.

doi:10.1007/bf01387549

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“…[1][2][3][4] Recently, AlN has stimulated more interest for its unique properties and potential applications in semiconductors, light emitters, laser diodes, and optoelectronic devices in the UV and visible spectral range. [5][6][7][8] Many advanced features, such as the widest band gap (∼6.2 eV), superior thermal conductivity and chemical stability, dielectric properties, and low electronic affinity value (0.25 eV) make AlN a good candidate of optoelectronic material for solid-state white-light-emitting devices.…”

Section: Introductionmentioning

confidence: 99%

“…(b) Highmagnification SEM image of AlN nanowires.The possible gaseous intermediates may be Al 2 O 2 or Al 2 O, and the corresponding reaction formula can be expressed by Eqs (2). and(3).1 4 According to thermodynamics, 32 the equilibrium partial pressure of Al 2 O (about 8.0 × 10 -3 atm) is about 400 times higher than that of Al 2 O 2 (about 2.0 × 10 -5 atm) at about 1800 C. Therefore, Al 2 O is likely to be a major aluminum suboxide if there is any vapor phase reaction involved in the Al 2 O 3 -Acetylene black-NH 3 system at about 1800 C. Recent research confirms that gaseous Al 2 O formed in the similar reaction 46.…”

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confidence: 99%

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Synthesis of h-AlN Nanowires via Carbothermal Reduction and Nitridation Method Using Acetylene Black

Yang

Zhu²,

Ruan³

et al. 2010

J. Nanosci. Nanotech.

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Using acetylene black as an assistant reagent in the ammonia atmosphere, one dimensional (1D) hexagonal single crystalline aluminum nitride (AIN) nanowires were successfully synthesized via carbothermal reduction and nitridation method. With smooth surface and uniform diameter, the wool-like product of AIN nanowires grow along [001] direction and are 80-120 nm in diameter and several tens micrometers in length. According to thermodynamic and kinetic analysis, AI2O3 initially was reduced to a volatile suboxide gas Al2O at 1800 degrees C. Then gaseous Al2O was transported by N2/NH3 mixtures to about 1200 degrees C, where 1D AIN nanowires formed by the reaction of Al2O gas, graphite and NH3. Due to high surface area, small particle size and amorphous structure, acetylene black maybe possess more active sites and more effective contact area, which benefits the first step reaction. The electrostatic polar charge model and crystallographic characteristics are employed to explain the growth mechanism of AIN nanowires. To our knowledge, acetylene black is the first time to be used for synthesizing 1D AIN nanostructures via carbothermal reduction and nitridation method, which would be an efficient, economical assistant reagent for fabricating nitride nanostructures.

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