A study of vacancy-type defects introduced by the carburization of Si by monoenergetic positron beams

Abstract

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Chemoheteroepitaxy of 3C‐SiC(111) on Si(111): Influence of Predeposited Ge on Structure and Composition

“…Thus, the conversion process of Si into SiC is connected with Si interstitials [102] and vacancies. [103] The Si interstitials are out-diffusing from the subsurface region where the transition from Si into SiC takes place. [102] At a later growth stage, due to a continuously growing SiC layer, Si vacancies are formed at the SiC/Si interface.…”

“…[102] At a later growth stage, due to a continuously growing SiC layer, Si vacancies are formed at the SiC/Si interface. [103] If the vacancy concentration is not too high, the vacancy sites can be filled by Ge atoms, leading to a stronger confinement of the carbon and germanium distributions and to a reduced vacancy coalescence probability. Both types of self-defects are able to accelerate the diffusion of carbon and germanium.…”

Mass-transport properties of ternary Fe(C,O) alloys revealed by multicomponent cluster synergies

“…Yet, equilibrium is not always reached [4], and kinetics is also affected by the evolving microstructure and vacancy content [5]. Moreover, internal oxidation may produce vacancy fluxes [6,7], leading to flux coupling [8]. Mass transport in crystals occurs via atom and defect displacements so it is an atomic scale phenomenon, and true understanding lies at this scale, while the change of scale to a phenomenological description in terms of transport coefficients provides practical models for materials scientists.…”