A study of ZnTe films grown on glass substrates using an atomic layer evaporation method

Ahonen, M.; Pessa, M.; Suntola, Tuomo

doi:10.1016/0040-6090(80)90240-0

Cited by 141 publications

(53 citation statements)

References 14 publications

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“…1 The principle demonstrated that a compound material thin film (e.g., ZnTe) could be formed by exposing a surface to alternating exposures of elemental constituents (Zn and Te vapors). 6 The ability to control the film growth was verified by a number of techniques including X-ray photoelectron spectroscopy. 6 By controlling the substrate temperature above the Zn and Te sublimation temperature but below the vaporization temperature for the ZnTe compound, the Zn atoms impinging on the surface would form stable bonds only with Te, and Te would bond only with Zn.…”

Section: Early Years Of Atomic Layer Processesmentioning

confidence: 99%

History of atomic layer deposition and its relationship with the American Vacuum Society

Parsons¹,

Elam²,

George³

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. This article explores the history of atomic layer deposition (ALD) and its relationship with the American Vacuum Society (AVS). The authors describe the origin and history of ALD science in the 1960s and 1970s. They also report on how the science and technology of ALD progressed through the 1990s and 2000s and continues today. This article focuses on how ALD developed within the AVS and continues to evolve through interactions made possible by the AVS, in particular, the annual International AVS ALD Conference. This conference benefits students, academics, researchers, and industry practitioners alike who seek to understand the fundamentals of self-limiting, alternating binary surface reactions, and how they can be applied to form functional (and sometimes profitable) thin film materials. The flexible structure of the AVS allowed the AVS to quickly organize the ALD community and create a primary conference home. Many new research areas have grown out of the original concepts of "Atomic Layer Epitaxy" and "Molecular Layering," and some of them are described in this article. The people and research in the ALD field continue to evolve, and the AVS ALD Conference is a primary example of how the AVS can help a field expand and flourish.

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Section: Early Years Of Atomic Layer Processesmentioning

confidence: 99%

History of atomic layer deposition and its relationship with the American Vacuum Society

Parsons¹,

Elam²,

George³

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…La cinética del mecanismo de incorporación de átomos de Zn a la capa de adsorción se puede plantear en términos de una ecuación de reacción de primer orden para la concentración de Zn de la forma (1) en donde la constante de reacción se ha descrito por medio de la constante de adsorción, k, multiplicada por la presión del flujo de Zn (P Zn ), x = x(Ts, t Zn , P Zn ), Ts es la temperatura del sustrato, y t Zn es el tiempo de exposición de la superficie al flujo de Zn.…”

Section: Cinética De Adsorción De Zincunclassified

Fabricación y caracterización de diodos emisores de luz con emisión en la región verde azul

Reyes

2017

Rev. Cient. Gen. José María Córdova

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Revista Científica General José María Córdova, Bogotá, Colombia, enero-junio, 2017 Recensión -Vol. 15, Núm. 19, pp. 337-347 issn 1900 Cómo citar este artículo: Salcedo, J.C. (2017, enero-julio Resumen. El pasado 7 de octubre de 2014 se anunció, por parte del correspondiente comité, que el premio Nobel de Física 2014 se les concedió a los japoneses Isamu Akasaki, Hiroshi Amano y Shuji Nakamura por la invención de los diodos emisores de luz (LED, por sus siglas en inglés) con emisión en la región verde-azul del espectro visible (Nakamura, Mukai & Senoh, 1991). La importancia de este invento está relacionada tanto con las potenciales aplicaciones de los LED azules como fuente de luz eficiente y ecológica, como en el desarrollo de los llamados sistemas cuánticos. Es así como actualmente el desarrollo de dispositivos electrónicos y opto-electrónicos, cuya región activa está constituida por estructuras cuánticas, está fuertemente modulado por la capacidad de fabricar dichas estructuras con una alta calidad cristalina, un alto control de la composición química y, sobre todo, con gran reproducibilidad. En este sentido, las técnicas de crecimiento epitaxial constituyen la piedra angular en el desarrollo tecnológico que supone la nano-electrónica. En este trabajo se plantean, en general, los diferentes procesos químicos y físicos que tienen lugar durante un crecimiento por Epitaxia de Capas Atómicas (Atomic Layer Epitaxy, ALE) de pozos cuánticos ultra-delgados (Ultra-Thin Quantum Wells, UTQW) de Zn X Cd 1-X. Se y se estudian, en particular, la cinética del proceso de adsorción de Zn dentro de la estructura cristalina en términos de una ecuación de reacción de primer orden que define la composición de la estructura en función de la temperatura del sustrato (Ts) y del flujo de átomos de zinc. Se obtienen los valores para la energía de activación, el factor pre-exponencial y la constante de adsorción de Zn. La composición química de los UTQW es uno de los parámetros más importantes para el diseño de estructuras cuánticas, ya que define la energía de emisión en potenciales aplicaciones opto-electrónicas y, en particular, en el desarrollo de LED azules y UV. Palabras clave: aleaciones ordenadas, epitaxia de capas atómicas, pozos cuánticos semiconductores, fotoluminiscencia, diodos emisores de luz. Abstract. On October 7th 2014, it was announced, by the Nobel committee, that the 2014 Physics Nobel prize was awarded to the Japanese Isamu Akasaki, Hiroshi Amano, and Shuji Nakamura for their development of LEDs with emission of blue-green visible light (Nakamura, Mukai & Senoh, 1991). The importance of this finding is based on the blue-LED potential applications as an efficient and ecological source of light, as well as on the development of the structure known as quantum wells. That is how the present development of electronic and optoelectronics devices, whose active region is composed of quantic wells, is strongly modulated by the capacity to construct such structures with high crystalline quality, chemical composition contr...

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“…ZnTe has proved to be a very successful material for the radiation detection in its bulk form although is a promising material for radiation detection in its nanolayers form 5,6 . The layer by layer growth regime can be implemented by a precise control of the precursor flows in systems as CVD, MOCVD, MBE, Radical-Enhanced ALD 7,10 . Normally, this is done by exposing the substrate, in an alternating way to the vapour of each one of the constituent elements of the layer, followed by a purge or dead period between exposures in order to evacuate adequately the growth chamber.…”

Section: Introductionmentioning

confidence: 99%

“…Normally, this is done by exposing the substrate, in an alternating way to the vapour of each one of the constituent elements of the layer, followed by a purge or dead period between exposures in order to evacuate adequately the growth chamber. An important characteristic of ALD is its self-regulated nature [7][8][9][10] . In this work are presented the results obtained of the growth and characterization of ZnTe epitaxial layers on GaSb and GaAs by ALD regime under an ambiance of high purity hydrogen at atmospheric pressure.…”

Section: Introductionmentioning

confidence: 99%

Structural Characterization of ZnTe Grown by Atomic-Layer-Deposition Regime on GaAs and GaSb (100) Oriented Substrates

et al. 2017

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This work presents the characterization of ZnTe nanolayers grown on GaAs and GaSb (100) substrates by the Atomic Layer Deposition (ALD) regime. Under certain conditions, the alternating exposition of a substrate surface to the element vapours makes possible the growth of atomic layers in a reactor where the atmosphere is high-purity hydrogen. ZnTe was grown simultaneously on GaAs and GaSb at the same run, allowing, a comparison between the effects produced by the superficial processes due to the different used substrates, thereby eliminating possible unintended changes of growth parameters. Nanolayers on GaSb maintained their shiny appearance even at temperatures near 420°C. It was found that for exposure times below 2.5 s there was not growth on GaAs, while for GaSb the shortest time was 1.5 s at 385°C. By HRXRD the peak corresponding to (004) diffraction plane of ZnTe was identified and investigated, the FWHM resulted very wide (600-800 arcsec) indicating a highly distorted lattice mainly due to mosaicity. Raman scattering shows the peak corresponding to LO-ZnTe, which is weak and slightly shifted in comparison with the reported for the bulk ZnTe at 210 cm -1 . Additionally, the measurements suggest that the crystalline quality have a dependence with the growth temperature.

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A study of ZnTe films grown on glass substrates using an atomic layer evaporation method

Cited by 141 publications

References 14 publications

History of atomic layer deposition and its relationship with the American Vacuum Society

History of atomic layer deposition and its relationship with the American Vacuum Society

Fabricación y caracterización de diodos emisores de luz con emisión en la región verde azul

Structural Characterization of ZnTe Grown by Atomic-Layer-Deposition Regime on GaAs and GaSb (100) Oriented Substrates

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