A study on electrical characterization and band offset of ITO/n-Si(111) heterojunction by pulsed laser deposition

Li, Yapeng; Li, Yingfeng; Zhang, Yonghong; Hou, Juncai; Liu, Wenyi; Wang, Jianyuan

doi:10.1007/s10854-017-7137-6

Cited by 4 publications

(2 citation statements)

References 20 publications

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“…Various deposition techniques have been used to obtain TCO thin films, such as: vacuum thermal evaporation [15–16], chemical vapor deposition [17], sol–gel [18], pyrolysis spray techniques [5,19], magnetron sputtering [20–22], and pulsed laser deposition (PLD) [23].…”

Section: Introductionmentioning

confidence: 99%

Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

Prepelita¹,

Stavarache²,

Crǎciun³

et al. 2019

Beilstein J. Nanotechnol.

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In this work, rapid thermal annealing (RTA) was applied to indium tin oxide (ITO) films in ambient atmosphere, resulting in significant improvements of the quality of the ITO films that are commonly used as conductive transparent electrodes for photovoltaic structures. Starting from a single sintered target (purity 99.95%), ITO thin films of predefined thickness (230 nm, 300 nm and 370 nm) were deposited at room temperature by radio-frequency magnetron sputtering (rfMS). After deposition, the films were subjected to a RTA process at 575 °C (heating rate 20 °C/s), maintained at this temperature for 10 minutes, then cooled down to room temperature at a rate of 20 °C/s. The film structure was modified by changing the deposition thickness or the RTA process. X-ray diffraction investigations revealed a cubic nanocrystalline structure for the as-deposited ITO films. After RTA, polycrystalline compounds with a textured (222) plane were observed. X-ray photon spectroscopy was used to confirm the beneficial effect of the RTA treatment on the ITO chemical composition. Using a Tauc plot, values of the optical band gap ranging from 3.17 to 3.67 eV were estimated. These values depend on the heat treatment and the thickness of the sample. Highly conductive indium tin oxide thin films (ρ = 7.4 × 10−5 Ω cm) were obtained after RTA treatment in an open atmosphere. Such films could be used to manufacture transparent contact electrodes for solar cells.

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Section: Introductionmentioning

confidence: 99%

Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

Prepelita¹,

Stavarache²,

Crǎciun³

et al. 2019

Beilstein J. Nanotechnol.

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show abstract

“…Because of the high transparency in the visible region and excellent electrical conductivity, ITO films have been widely employed in various research fields such as biosensing technology, , electroanalysis, liquid crystal displays, , photovoltaic devices, , and light-emitting diodes. − In addition to this, ITO films with flat surfaces could be used as conductive substrates for specific characterization techniques such as ultraviolet photoelectron spectroscopy and scanning tunneling microscopy . Various techniques are available for ITO film preparation, including sol–gel process, spray pyrolysis, vacuum evaporation, , electron beam evaporation, magnetron sputtering, − pulsed laser deposition, − ion beam sputtering, chemical vapor deposition, − atomic layer deposition, and so forth. Generally, amorphous or nonepitaxial polycrystalline ITO films are usually obtained on the commonly used substrates for ITO deposition such as quartz, corning glass, polymer, and silicon substrates, while the orientation-controlled or epitaxial ITO films can be obtained on yttria-stabilized zirconia (YSZ) or sapphire (Al 2 O 3 ) substrates under specific preparation conditions because of the low lattice mismatch between ITO films and the substrates. ,,,,− …”

Section: Introductionmentioning

confidence: 99%

Influence of Substrate Orientation and Oxygen Partial Pressure on the Morphology, Structure, and Electrical Property of Epitaxial Indium Tin Oxide Films

Huang

2021

Crystal Growth & Design

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Indium tin oxide (ITO, tin-doped indium oxide) has been widely used in optoelectronic and other research fields because of its excellent electrical conductivity. However, there is a lack of systemic research on the influence of crystal orientation on the electrical properties of epitaxial ITO films. In this work, the epitaxial ITO films were deposited on low index planes of yttria-stabilized zirconia substrates by direct current magnetron sputtering at different oxygen partial pressures ranging from 0 to 3 Pa. The carrier concentration of the ITO film decreased with the increase of the oxygen partial pressure and further leading to the increase of overall resistivity. In addition, we also found that the Hall mobilities of ITO (100) films rapidly decreased with the oxygen partial pressure, while the Hall mobilities of ITO (111) films remained unchanged. The anisotropy of the carrier mobility was the main factor for the resistivity difference of ITO films with different orientations at high oxygen partial pressure.

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Epitaxial indium tin oxide films deposited on yttrium stabilized zirconia substrate by DC magnetron sputtering

Huang

Kou

et al. 2021

Physica B: Condensed Matter

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A study on electrical characterization and band offset of ITO/n-Si(111) heterojunction by pulsed laser deposition

Cited by 4 publications

References 20 publications

Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

Influence of Substrate Orientation and Oxygen Partial Pressure on the Morphology, Structure, and Electrical Property of Epitaxial Indium Tin Oxide Films

Epitaxial indium tin oxide films deposited on yttrium stabilized zirconia substrate by DC magnetron sputtering

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