A study on influence of potential defects and optimization of device structure for CuSbS2 based thin film solar cell using SCAPS – 1D simulator

Malani, Rajeshkumar; Pansuriya, Tushar; Kheraj, Vipul

doi:10.1016/j.optmat.2022.112910

Cited by 16 publications

(5 citation statements)

References 37 publications

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“…Meanwhile, the J SC decreased from 24.88 mA cm −2 to 24.73 mA cm −2 as N A increases, resulting from the increasing number of hole traps, leading to recombination of induced electrons due to coulomb attraction. 48 As shown in Fig. 5c, the value of FF enhances initially but reduces with further increase of the N A value.…”

Section: Resultsmentioning

confidence: 66%

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Understanding Auger recombination in perovskite solar cells

Al-Mousoi¹,

Mohammed

Kumar

et al. 2023

Phys. Chem. Chem. Phys.

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Section: Resultsmentioning

confidence: 66%

“…The performance of photovoltaics is reduced by a phenomenon known as Auger recombination, which occurs when energy from the recombination of holes and electrons is transmitted to either electrons or holes to excite them to higher energy levels. 48 Fig. 4a shows variation of the Auger electron/hole capture coefficient with J-V plots and Fig.…”

Section: Resultsmentioning

confidence: 99%

Understanding Auger recombination in perovskite solar cells

Al-Mousoi¹,

Mohammed

Kumar

et al. 2023

Phys. Chem. Chem. Phys.

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“…Figure illustrates how the solar cell’s photovoltaic parameters vary with the thickness of the MAPbI 3 layer, ranging from 100 to 400 nm. It can be seen that both the short-circuit current density ( J SC ) and power conversion efficiency (PCE) incrementally increase with the active layer’s thickness, reaching their maximum around 300 nm, consistent with the heightened formation of electron–hole pairs in the MAPbI 3 layer . The J SC shows a decreasing trend as the thickness of the MAPbI 3 layer increases from 300 to 400 nm.…”

Section: Resultsmentioning

confidence: 79%

“…It can be seen that both the short-circuit current density (J SC ) and power conversion efficiency (PCE) incrementally increase with the active layer's thickness, reaching their maximum around 300 nm, consistent with the heightened formation of electron−hole pairs in the MAPbI 3 layer. 36 The J SC shows a decreasing trend as the thickness of the MAPbI 3 layer increases from 300 to 400 nm. This trend is due to nonradiative recombination processes that lead to the loss of photogenerated charge carriers, 37 as depicted in Figure 2a.…”

Section: ■ Results and Discussionmentioning

confidence: 94%

Modeling and Simulation of MAPbI₃-Based Solar Cells with SnS₂ as the Electron Transport Layer (ETL) and MoS₂ as the Hole Transport Layer (HTL)

Li,

Guo,

Zhao

et al. 2024

ACS Appl. Electron. Mater.

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The integration of two-dimensional (2D) materials with perovskite solar cells is an exciting frontier of research. In this study, we utilize the 2D materials SnS 2 and MoS 2 as the electron transport layer (ETL) and hole transport layer (HTL), respectively, due to their exceptional photovoltaic properties. The primary aim of our work is to enhance the performance of the proposed solar cell configuration, ITO/ SnS 2 /MAPbI 3 /MoS 2 /Au, by optimizing the thickness of each layer through numerical simulations. Additionally, we conducted a comprehensive evaluation of the effects of layer thickness, light intensity, and operating temperature on the photovoltaic performance of these solar cells. Our findings indicate that the theoretical efficiency of the solar cells can be increased from 15.76% to 16.95% by determining the optimal thicknesses for the layers: ITO (100 nm), SnS 2 (10 nm), MAPbI 3 (300 nm), MoS 2 (20 nm), and Au (100 nm). The redesigned perovskite solar cells (PSCs), with the proposed structure and optimized layer thicknesses, exhibit superior performance compared with traditional solar cells that use the configuration ITO/SnO 2 /MAPbI 3 /Spiro-OMeTAD/Au. Consequently, this research suggests that the 2D materials SnS 2 and MoS 2 are promising alternatives to the conventional materials SnO 2 and Spiro-OMeTAD, respectively. This study offers valuable insights that could facilitate the advancement of highly efficient solar cells incorporating 2D materials as the transport layers.

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“…Using a hybrid ink method, Banu et al developed CuSbS 2 based solar cells in 2016 and obtained the greatest PCE of 3.22% with a V oc of 470 mV [2]. It is understood that the absorber layer flaws and dominant interfacial recombination of minority carriers limit the performance of CuSbS 2 solar cells [50][51][52].…”

Section: Introductionmentioning

confidence: 99%

Numerical investigation of CuSbS₂ thin film solar cell using SCAPS-1D: enhancement of efficiency on experimental films by defect studies

Valeti,

Prakash,

Singha

et al. 2024

Mater. Res. Express

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The study of photovoltaic solar cells has been an exciting field of research because of their environmentally friendly nature. Scientists are continuously searching for new methods to develop solar cells that are highly efficient and cost-effective. One promising option is the use of Copper Antimony Sulphide (CuSbS2) based ternary compound semiconductor in ultrathin film photovoltaic cells. This material has a high absorption coefficient, low cost, and is readily available in the earth's crust. These characteristics make it an ideal candidate for use as a thin-film absorber layer in solar cells. In this work, FTO/CdS/In2S3/CuSbS2/Spiro-OMeTAD/Au device is proposed to improve the efficiency of experimentally designed CuSbS2-based thin film solar cells using numerical modeling. Device simulation was carried out using SCAPS-1D software, and the illumination spectrum used for this optimization was 1.5 AM. The simulated results from SCAPS-1D were compared to the experimental data. After optimizing the device parameters all the electrical parameters of the solar cell were improved. The optimized CuSbS2-based device shows power conversion efficiency (PCE) of 21.11% with short circuit current density (Jsc) of 20.96 mA/cm2, open circuit voltage (Voc) of 1.23 V, and fill factor (FF) of 81.84 %. Based on the simulation results, it is possible to increase the performance of the device by varying different parameters such as the defect density of each layer, interfacial defect density, thickness, and doping concentration.

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A study on influence of potential defects and optimization of device structure for CuSbS2 based thin film solar cell using SCAPS – 1D simulator

Cited by 16 publications

References 37 publications

Understanding Auger recombination in perovskite solar cells

Understanding Auger recombination in perovskite solar cells

Modeling and Simulation of MAPbI₃-Based Solar Cells with SnS₂ as the Electron Transport Layer (ETL) and MoS₂ as the Hole Transport Layer (HTL)

Numerical investigation of CuSbS₂ thin film solar cell using SCAPS-1D: enhancement of efficiency on experimental films by defect studies

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A study on influence of potential defects and optimization of device structure for CuSbS2 based thin film solar cell using SCAPS – 1D simulator

Cited by 16 publications

References 37 publications

Understanding Auger recombination in perovskite solar cells

Understanding Auger recombination in perovskite solar cells

Modeling and Simulation of MAPbI3-Based Solar Cells with SnS2 as the Electron Transport Layer (ETL) and MoS2 as the Hole Transport Layer (HTL)

Numerical investigation of CuSbS2 thin film solar cell using SCAPS-1D: enhancement of efficiency on experimental films by defect studies

Contact Info

Product

Resources

About

Modeling and Simulation of MAPbI₃-Based Solar Cells with SnS₂ as the Electron Transport Layer (ETL) and MoS₂ as the Hole Transport Layer (HTL)

Numerical investigation of CuSbS₂ thin film solar cell using SCAPS-1D: enhancement of efficiency on experimental films by defect studies