A study on photothermal waves in an unbounded semiconductor medium with cylindrical cavity

Hobiny, Aatef; Abbas, Ibrahim A.

doi:10.1007/s11043-016-9318-8

Cited by 64 publications

(17 citation statements)

References 35 publications

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“…Povstenko investigated thermal stresses in an infinite body with a circular cylindrical hole with the Caputo time‐fractional derivative. Some more research on thermoelastic body with cylindrical cavity under different theories can be found in [].…”

Section: Introductionmentioning

confidence: 99%

Transient responses in a two‐temperature thermoelastic infinite medium having cylindrical cavity due to moving heat source with memory‐dependent derivative

Sarkar

Mondal²

2019

Z Angew Math Mech

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This work deals with the study of transient responses in a two-temperature generalized thermoelastic infinite medium having a cylindrical cavity due to a time-dependent moving heat source where the conventional Fourier's law of heat conduction is modified by introducing a new Taylor's series expansion using memory-dependent derivative (MDD). The resulting non-dimensional equations are applied to a specific problem. A direct approach is introduced to obtain the analytical expressions of the physical quantities in the Laplace transform domain. The inversion of the Laplace transforms are carried out using the methods based on the Fourier series expansion technique. Numerical results for the dynamical and conductive temperatures, stress, strain, and displacement are presented graphically. The effects of time-delay and kernel function have been studied on the thermo-physical quantities. K E Y W O R D S kernel function, Laplace transform, memory-dependent derivative, moving heat source, time-delay, twotemperature with ( − ) = ( − ) − −1 Γ( − ) , where ( ) indicates the usual -th order derivative of the function.

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Section: Introductionmentioning

confidence: 99%

Transient responses in a two‐temperature thermoelastic infinite medium having cylindrical cavity due to moving heat source with memory‐dependent derivative

Sarkar

Mondal²

2019

Z Angew Math Mech

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“…The silicone (Si) and germanium (Ge) materials are chosen as a semiconductor example to make the numerical simulation (using Maple program). To obtain the main results of the basic quantity fields numerically, the physical constants of semiconducting Si medium and Ge are chosen and given as follows [43][44][45][46]: But, the physical constants of Ge material are given below [20,21]: α 0 = 0.779 × 10 −9 N, τ 0 = 0.00005s, ν 0 = 0.0005s.…”

Section: Discussion and Numerical Resultsmentioning

confidence: 99%

Generalized photo-thermo-microstretch elastic solid semiconductor medium due to the excitation process

Raddadi

Lotfy

El-Bary

et al. 2021

Journal of Taibah University for Science

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A novel model in the photo-thermoelasticity theory with microstretch properties is studied. The plasma-elastic-thermal plane waves are propagated in a linear isotropic generalized photothermo-microstretch elastic semiconductor solid medium. The photothermal excitation occurs in the context of the microinertia of the microelement process during two-dimensional (2D) deformation. The harmonic wave techniques are used to get the solutions for the basic variables. The analytical solution of the main physical fields; carrier intensity, normal displacement components, temperature, stress load force, microstress and tangential coupled stress can be obtained. Some graphics illustrated when using the plasma, thermal and mechanical load boundary conditions are applied at the outer free surface of the elastic medium. Some semiconductor materials, as silicon (Si) and Germanium (Ge), are used to make the numerical simulation and some comparisons in different thermal memories are made. The main physical variables with new parameters are discussed theoretically and shown graphically.

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“…For numerical evaluations we chose silicon (Si) as semiconductor elastic crystal material. The constants (parameters in SI unit) of the problem as silicon are listed in Table 1 20,34 :…”

Section: Numerical Results and Discussionmentioning

confidence: 99%

“…14–19 used the thermal memory to discuss the overlap between the Photothermal and the generalized thermoelasticty theories in semiconductor materials with different external fields. Hobiny and Abbas 20,21 studied the non-homogenous semiconductor materials with cylindrical cavity by Photothermal theory. Abo-Dahab and Lotfy 22 used the two-temperature theory to explain the photo-excitation of a semiconductor medium.…”

Section: Introductionmentioning

confidence: 99%

A novel model for photothermal excitation of variable thermal conductivity semiconductor elastic medium subjected to mechanical ramp type with two-temperature theory and magnetic field

Lotfy

2019

Sci Rep

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This article focuses on studying the dependence of the thermal conductivity of a semiconducting medium on temperature in context of photothermal transport process and variable thermal conductivity, chosen to be linear function in temperature. The effect of the initial magnetic field is introduced in the problem governing equations with the two-temperature theory. The complete solution in one dimension is obtained using Laplace transform technique. The thermal heating ramp type and mechanical load throughout the elastic-photothermal excitation are considered in the problem boundary conditions. Some physical fields are obtained by using numerical inversion of the Laplace transform and Riemann-sum approximation method. The thermo-dynamical temperature, conductive temperature, displacement, strain, normal stress and carrier density are discussed and shown graphically with some comparisons.

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A study on photothermal waves in an unbounded semiconductor medium with cylindrical cavity

Cited by 64 publications

References 35 publications

Transient responses in a two‐temperature thermoelastic infinite medium having cylindrical cavity due to moving heat source with memory‐dependent derivative

Transient responses in a two‐temperature thermoelastic infinite medium having cylindrical cavity due to moving heat source with memory‐dependent derivative

Generalized photo-thermo-microstretch elastic solid semiconductor medium due to the excitation process

A novel model for photothermal excitation of variable thermal conductivity semiconductor elastic medium subjected to mechanical ramp type with two-temperature theory and magnetic field

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