A study on pinned layer magnetization processes in different antiferromagnetic coupling systems of spin-valves

Abstract

In this paper we report on magnetization reversal processes of pinned layers in different ferromagnetic and anti-ferromagnetic bilayer and spin-valve structures by observing hysteresis, switching field distribution (SFD), and time-dependent effects. The fact that time-dependent coercivity Hc tendency is more pronounced in ordered AF materials than that of disordered AF materials implies a spin reversal of some AF grains with locally low pinning field and low blocking temperature. We propose a simple qualitative model to explain our results in terms of a distribution of the pinning reversal field and temperature in AF layer, which may be due to a grain size distribution in the AF layer and an incomplete and inhomogeneous phase transformation in some ordered AF materials. High resolution electron microscopy (HREM) results reveal that lattice spacing does change from place to place in AF region of some ordered AF materials. The evidence indicates an incomplete and inhomogeneous phase transformation in the ordered AF systems, supporting the results of the magnetization reversal process study.

Switching field dependence on heating pulse duration in thermally assisted magnetic random access memories

“…the switching field H SW , is of great importance. Previous work on continuous F/AF thin films has evidenced an increase of the coercive field with increasing magnetic field sweep rate [8,9] and an increase of the switching field with decreasing field application time at constant temperature [10,11]. For a TA-MRAM, the switching action of H is constrained to the time scale of the heating electric pulse.…”