A study on process-compatibility in CMOS-first MEMS-last integration

Takahashi, Kazuhiro; Mita, Makoto; Fujita, Hiroyuki; Suzuki, Koji; Funaki, Hideyuki; Itaya, Kazuhiko; Toshiyoshi, Hiroshi

doi:10.1109/cicc.2008.4672026

Cited by 7 publications

(4 citation statements)

References 7 publications

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“…This implies that one would need to consult with a pre-calibrated look-up table to speculate the voltage level needed to attain the target scan angle. It is rather recommended, therefore, that the scanner angle would be controlled by the PWM of narrow pulse width (duty ratio < 10%) at a given voltage level, as the drive circuit can be simply assembled with a compact digital electronics with a level shifter circuit (19) .…”

Section: Verification Of Pwm Operationmentioning

confidence: 99%

An Equivalent Circuit Model for Vertical Comb Drive MEMS Optical Scanner Controlled by Pulse Width Modulation

et al. 2012

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An equivalent circuit model for the resonant-type vertical comb-driven optical MEMS (micro electro mechanical system) scanner has been developed based on the simple extension of the parallel-plate model. Both the electrostatic torque and the induction charge models are interpreted by using the equation-defined nonlinear dependent current source on the electrical circuit simulator platform. A systematic procedure has been investigated to fit the analytical model with the experimental results by using fitting parameters including the damping coefficient, the suspension width, and the comb gap. The developed simulation model has been used to verify a new control scheme to tune the scanner's oscillation amplitude in resonance by means of the pulse-width modulation of voltage at a given pulse height; the result indicates the effective use of digital electronics for the comb-driven optical scanner.

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Section: Verification Of Pwm Operationmentioning

confidence: 99%

An Equivalent Circuit Model for Vertical Comb Drive MEMS Optical Scanner Controlled by Pulse Width Modulation

et al. 2012

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“…Along with the ever-growing demand for miniaturized sensors and actuators, interest is also sharply increasing toward fully monolithic systems, enabling the integration of microelectromechanical systems (MEMS) and electronics directly onto a single integrated circuit (IC) [1][2][3][4][5][6][7]. These highly integrated solutions can provide numerous advantages over discrete or system-in-package (SiP) implementations: (1) The inclusion of IC and MEMS within a common batch fabrication flow can reduce costs through the consolidation of certain process steps, in addition to the sharing of manufacturing equipment, materials and facilities.…”

Section: Benefits and Types Of Monolithic Integrationmentioning

confidence: 99%

A novel prototyping method for die-level monolithic integration of MEMS above-IC

Cicek

Zhang

Saha

et al. 2013

J. Micromech. Microeng.

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This work presents a convenient and versatile prototyping method for integrating surface-micromachined microelectromechanical systems (MEMS) directly above IC electronics, at the die level. Such localized implementation helps reduce development costs associated with the acquisition of full-sized semiconductor wafers. To demonstrate the validity of this method, variants of an IC-compatible surface-micromachining MEMS process are used to build different MEMS devices above a commercial transimpedance amplifier chip. Subsequent functional assessments for both the electronics and the MEMS indicate that the integration is successful, validating the prototyping methodology presented in this work, as well as the suitability of the selected MEMS technology for above-IC integration.

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“…14) Figure 1(b-2) shows another method by which a MEMS sensor is fabricated on a silicon-on-insulator (SOI) wafer by etching a silicon layer and a buried oxide (BOX) layer from the top surface of the wafer. [15][16][17][18][19][20][21][22][23] In the case of the method shown in Fig. 1(b-1), it is easy to fabricate devices on a silicon wafer.…”

Section: Introductionmentioning

confidence: 99%

Laminated wafer with conductive diamond layer formed by surface-activated bonding at room temperature for micro-electro mechanical system sensors

Koga

Yamada

TANAKA

et al. 2022

Jpn. J. Appl. Phys.

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We propose the use of a laminated wafer with a conductive diamond layer for forming cavities as an alternative SOI wafer for MEMS sensors. Since this wafer has no insulator such as a BOX layer but a conductive layer, it is not charged during plasma treatments in MEMS sensor fabrication processes. The conductive diamond layer was deposited on a base wafer with boron of more than 2 × 1021 atoms/cm3 by MW-CVD. The resistivity of this layer was 0.025 Ωcm, and this layer can be selectively etched to a base wafer made of silicon crystal, such as a BOX layer. In addition, a silicon wafer could be bonded on its layer without voids with gaps of more than 2 nm by surface-activated bonding. Therefore, we believe that the laminated wafer studied here is useful for the fabrication processes for MEMS sensors that may otherwise be damaged by plasma treatment.

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A study on process-compatibility in CMOS-first MEMS-last integration

Cited by 7 publications

References 7 publications

An Equivalent Circuit Model for Vertical Comb Drive MEMS Optical Scanner Controlled by Pulse Width Modulation

An Equivalent Circuit Model for Vertical Comb Drive MEMS Optical Scanner Controlled by Pulse Width Modulation

A novel prototyping method for die-level monolithic integration of MEMS above-IC

Laminated wafer with conductive diamond layer formed by surface-activated bonding at room temperature for micro-electro mechanical system sensors

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