A Study on Set Process and Its Influence on Performance of Resistive Switching

Abstract

In this paper, it has been found that resistive switching (RS) types are dominated by magnitude and polarities of set voltage (V set ). The difference in V set and its influences on RS behaviors between bipolar and unipolar RS are studied. There are two types of polarity dependence of V set in devices, which comes from the influence of defects on breakdown. The resistances of low resistance state (LRS) of bipolar are much smaller than these of unipolar RS under the same current compliance. The LRS resistances of bipolar RS show complex dependence on V set . It reveals that the oxygen vacancy (V O ) filaments properties and RS types are controlled by the intrinsic properties of breakdown and remnant defects.

Memory state protected from leakage current in Ti/SiN/NiN/Pt bilayer resistive random-access memory devices for array applications

“…Then, the state of to further assess the reliability at high temperature. These results allowed the LRS and the HRS to have a small increase in current as an insulator [22,23], but did not degrade electrical characteristics of the proposed memory device. Then, we investigated the RS characteristics of the SiN/ NiN 1S1R memory devices in the pulsed mode to define the set and reset conditions.…”