A study on structure, surface morphology, optical and electrical properties of spray pyrolyzed ZnO and Zn0.97Nd0.03O thin films

Srivathsa, Manu; Rajendra, B.V.

doi:10.1016/j.matpr.2021.12.302

Cited by 2 publications

(1 citation statement)

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“…Deep-level emissions are typically thought to be directly related to structural imperfections in the ZnO matrix, such as oxygen vacancies (V o ) or zinc interstitials (Zn i ) [33]. When the dopant was introduced into the host material, the band edge of the ZnO sample experienced a redshift at lower concentrations and then shifted back to the higher energies at increased doping levels, may be due to the Nd 4f electrons generating new, unoccupied states close to the conduction band edge of the ZnO energy levels [34]. The Nd doping also considerably improved the band edge peak intensity.…”

Section: Optical Characterizationmentioning

confidence: 99%

Enhancement in the Transport and Optoelectrical Properties of Spray Coated ZnO Thin Films by Nd Dopant

Srivathsa

Kumar

Goutam

et al. 2022

Electron. Mater. Lett.

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This research work focuses on the influence of Neodymium (Nd) doping (0–10 at.%) on the structural, optical, electrical, and photo-response properties of Zinc Oxide thin films deposited on glass substrates by cost-effective spray pyrolysis technique. For all the deposited films, the X-ray diffraction peaks matched the hexagonal wurtzite structure of ZnO with the maximum intensity along the (1 0 1) plane. Using XRD data, the crystallite size, dislocation density, and micro-strain of the films were estimated. Compared to other films, Zn0.96Nd0.04O film exhibited higher crystallinity ~ 18 nm. At higher doping concentrations, a fibrous-granular mixed structure was observed. Above 80 percentage of transparency in the visible region and bandgap of 3.42 eV was observed for the Zn0.96Nd0.04O film. The decrease in Urbach energy with increase in the doping concentration indicated the improvement in crystallinity. The peaks related to band edge emission, zinc, and oxygen-related defects were observed in the photoluminescence analysis also increased band edge emission and lesser defects were observed in the Zn0.96Nd0.04O film. The highest charge carrier concentration ~ 1.7 × 1017 cm−3 and mobility ~ 62.8 cm2/Vs were noticed in of Zn0.96Nd0.04O film. When exposed to UV light, Zn0.96Nd0.04O film exhibited the maximum photocurrent ~ 10−4 A. Hence the Zn0.96Nd0.04O film can be used as a UV photodetector. Graphical Abstract

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Section: Optical Characterizationmentioning

confidence: 99%