2022
DOI: 10.1063/5.0083710
|View full text |Cite
|
Sign up to set email alerts
|

A study on sub-bandgap photoexcitation in nitrogen- and boron-doped diamond with interdigitated device structure

Abstract: Diamond is an ultrawide-bandgap semiconductor suitable for high power devices that require high current carrying capacity, high blocking voltages, and smaller form factors. We investigated various diamond structures for extrinsic photoconductive semiconductor switches, including an insulating high-pressure high-temperature type Ib (highly nitrogen-doped) substrate, a chemical vapor deposited (CVD) type IIa (unintentionally doped) substrate, a CVD grown semiconducting boron-doped epilayer on a type IIa substrat… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
8
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
5
1

Relationship

1
5

Authors

Journals

citations
Cited by 8 publications
(8 citation statements)
references
References 19 publications
0
8
0
Order By: Relevance
“…Furthermore, as there are increased efforts toward electrification, developing safer mechanisms for making and breaking high power circuits is a priority. By decoupling the trigger from the circuit with an optical source, the chances of false triggering are reduced and more simple and resilient circuits can be enabled [345]. One of the main issues of photoconductive switches is their short lifespan resulting from voltage and current overloads as well as thermal runaway effects at high-power levels [344].…”
Section: Photoconductive Semiconductor Switchingmentioning
confidence: 99%
See 2 more Smart Citations
“…Furthermore, as there are increased efforts toward electrification, developing safer mechanisms for making and breaking high power circuits is a priority. By decoupling the trigger from the circuit with an optical source, the chances of false triggering are reduced and more simple and resilient circuits can be enabled [345]. One of the main issues of photoconductive switches is their short lifespan resulting from voltage and current overloads as well as thermal runaway effects at high-power levels [344].…”
Section: Photoconductive Semiconductor Switchingmentioning
confidence: 99%
“…This enables PCSS functionality with more accessible sub-bandgap excitation sources in the visible or infrared range while maintaining the desirable properties of diamond. Nitrogen-doped diamond-based PCSSs have shown nanosecond pulsed responses to 532 nm light by exciting an electron from the deep defect level (1.7-2.0 eV) of nitrogen into the conduction band [345,349]. Since diamond's nitrogen dopants are largely inactivated at room temperature, making ohmic contacts is challenging for PCSS devices.…”
Section: Photoconductive Semiconductor Switchingmentioning
confidence: 99%
See 1 more Smart Citation
“…For the receive side, low-noise amplifiers with high linearity are desired. (Malakoutian et al, 2021;Narita et al, 2022;Tanaka et al, 2017;Tsao et al, 2018;Woo et al, 2022)] Power/High-Frequency Electronics…”
Section: Variability and Error Propagation In Low-energy Processesmentioning
confidence: 99%
“…This property is of essential importance in power electronics applications. In addition, with the growing interest in diamond-based photoconductive semiconductor switches (PCSS) thanks to sub-bandgap illumination [6], [7], diamondbased NVPSs, which are also activated by illumination rather than electrically triggered, are particularly promising in this rapidly evolving field. The integration of non-volatility in diamond devices is made possible by the generation of photoinduced carriers from deep impurities, enabling gate control.…”
Section: Introductionmentioning
confidence: 99%