A study on the characteristic of parameters by the response surface method in final wafer polishing

Abstract

As the level of Si-wafer surface directly affects device line-width capability, process latitude, yield, and throughput in fabrication of microchips, it needs to have ultra precision surface and flatness. Polishing is one of the important processing having influence on the surface roughness in manufacturing of Si-wafers. The surface roughness in final wafer polishing is mainly affected by the many process parameters. For decreasing the surface, the control of polishing parameters is very important. In this paper, the optimum condition selection of ultra precision wafer polishing and the effect of polishing parameters on the surface roughness were evaluated by using central composite designs such as the Box-Behnken method. Moreover, in accordance with variation of process variables, there is a temperature change on pad surface. And so, this paper also researches that this temperature variation affects surface roughness of Si-wafer.

Analysis and Experimental Verification of Mechanical Errors in Nine-Link Type Double-Toggle Mold/Die Clamping Mechanisms

“…To this end, statistical regression models for estimating the four quantitative indices, ∆S, F F(rms) , F B(rms) , and F TP , caused by the two independent variables (∆r 8 , v) must be established. By using the well-known response surface methodology (RSM) [31][32][33][34][35][36] with a modified cubic model [36] and the mean values of the four terms listed in Tables 3-8, four approximate functions with respect to ∆r 8 and v can be obtained as The norms of residuals of the four approximate models are reasonably small. Subsequently, according to Equation (36), the output error of the upper sub-mechanism (as shown in Figure 5) induced only by ∆r 8 is…”

On the Optimization of Prime Silicon Wafer Geometry in Final Chemical Mechanical Polishing

“…For more than half a century, prime silicon wafer is being used as the fundamental material for ULSI manufacturing [1][2][3]. With the technology node of ULSI decreases to less than 20 nm and the diameter of the wafers increases to more than 300 mm, extremely tight requirements are being placed on both the shape of the prime wafer and the flatness of its surface.…”

Modeling and optimization in precise boring processes for aluminum alloy 6061T6 components

“…Sarkar 11 used the RSM method to determine the optimal settings of wire electrical discharge machining parameters for surface roughness, dimensional shift, and cutting speed. Lee et al 12 used RSM to determine the best possible parametric settings when considering surface roughness in ultra precision Si-wafer polishing. Lin et al 13 applied the D-optimal mixture design (DMD) integrating response surface methodology (RSM) to discuss variations of mechanical characteristics, during the production of short glass fiber (SGF) and polytetrafluoroethylene (PTFE) reinforced polycarbonate (PC) composites via an injection molding process.…”