A study on the crystallization behavior of Sn-doped amorphous Ge 2 Sb 2 Te 5 by ultraviolet laser radiation

Structural and spectroscopic ellipsometry studies on vacuum-evaporated Sn2m−4Sb4S2m+2 (m = 2.5, 3 and 4) thin films deposited on glass and Si substrates

“…Ge-Sb-S/Se films are attractive for their potential use in chip-based devices operating in the mid-infrared and for ease of nanostructure incorporation [1,2]. They have advantageous properties such as high reflectivity contrast, cyclability, long term stability, and fast crystallization speed [3]. Ge-rich compositions of the Ge-Sb-Se system are preferable for molded lens application since thermal and mechanical properties are better in these compositions [4].…”

Investigating the Influence of Resonant Bonding on the Optical Properties of Phase Change Materials (GeTe)xSnSb2Se4

“…Among these studies, those reporting the effects of substitution of Te with Se that leads to greatly enhanced electrical properties, which improve the potential of these materials for future electrical data storage applications, are most relevant for our investigation. Other publications dealt with the substitution of Ge with Sn, revealing the exceptionally high optical contrast of the samples. , Comparable results were obtained by the simultaneous substitution of Ge with Sn and Te with Se . The last mentioned samples can be synthesized as thin films via co-sputtering of GeTe and SnSb 2 Se 4 .…”

Study on the phase change material Cr-doped Sb 3 Te 1 for application in phase change memory

“…The characteristics of phase change materials have deep influence on the performance of PCM, thus many phase change materials are studied. Ge 2 Sb 2 Te 5 (GST) is widely utilized in PCM because of good crystallization speed and thermal stability, but low crystallization temperature (T c ) and inferior data retention make it not meet the demand of high thermal stable and high speed PCM [6][7][8][9][10].…”