Gallium oxide (Ga2O3) is a transparent material with high absorption in the UVC region of the electromagnetic spectrum and hence is a very important candidate in the field of fabrication of short wavelength optical devices. A proper understanding about the different optical parameters is necessary for developing more efficient coatings and devices. In this work, changes in the optical behaviour of gallium oxide thin films due to post-deposition annealing (at temperatures 300 – 900°C) are discussed in detail. Structural, surface morphological and compositional modifications of the films are identified using the XRD, SEM and XPS techniques respectively. At 900°C, highly stable monoclinic β phase of Ga2O3 is obtained. The optical transmittance spectra acquired using UV-Vis spectroscopy indicate the improved UVC absorbance of the β-Ga2O3 films with excellent visible transmittance (>80%). Structural transformation from amorphous to crystalline β-Ga2O3 phase and the associated reduction in defect density is found to modify other optical attributes also, like bandgap energy, Urbach energy, dispersion parameters etc.