A Study on the Optimized Ohmic Contact Process of AlGaN/GaN-Si MIS-HEMTs

Guan, He; Shen, Guiyu; Gao, Bo; Zhang, Hao; Wang, Yucheng; Wang, Shaoxi

doi:10.1109/access.2020.3048227

Cited by 7 publications

(1 citation statement)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Meanwhile, there is little research on the threshold stability and gate reliability of the ALD-Al 2 O 3 gate dielectric. We have already characterized the trap states and performance of the device with alternating O 2 plasma treatment in our previous articles [ 22 ]. In this work, the V th stability and gate reliability characteristics of the AlGaN/GaN MIS-HEMTs with the alternating O 2 plasma treatment were investigated.…”

Section: Introductionmentioning

confidence: 99%

Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment

Xie,

Wang,

Pan

et al. 2024

Nanomaterials

View full text Add to dashboard Cite

The Vth stability and gate reliability of AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) with alternating O2 plasma treatment were systematically investigated in this article. It was found that the conduction band offset at the Al2O3/AlGaN interface was elevated to 2.4 eV, which contributed to the suppressed gate leakage current. The time-dependent dielectric breakdown (TDDB) test results showed that the ALD-Al2O3 with the alternating O2 plasma treatment had better quality and reliability. The AlGaN/GaN MIS-HEMT with the alternating O2 plasma treatment demonstrated remarkable advantages in higher Vth stability under high-temperature and long-term gate bias stress.

show abstract

Section: Introductionmentioning

confidence: 99%