A Study on the Performance of Gate-All-Around Heterojunction Tunnel Field-Effect Transistors Based on Polarization Effect
Yunhe Guan,
Zhen Dou,
Jiachen Lu
et al.
Abstract:Tunnel field-effect transistors (TFETs) have gained prominence in low-power applications for their capability to surpass the subthreshold swing limit of 60 mV/decade. This paper introduces a TFET, named gate-all-around polar-TFET (GAA-P-TFET), which leverages the polarization effect at the interface of In 0.75 Ga 0.25 N/Al 0.1 In 0.9 N heterojunctions to enhance TFET performance, particularly to reduce the average subthreshold swing (SS) and increase the ON-OFF current ratio (I ON /I OFF ). The TCAD simulation… Show more
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