A study on the short-circuit capability of field-stop igbts

Otsuki, M.; Onozawa, Yuichi; Kanemaru, H.; Seki, Y.; Matsumoto, Takashi

doi:10.1109/ted.2003.813505

Cited by 70 publications

(43 citation statements)

References 16 publications

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“…So, it is of the first importance to carry out investigations on the behavior of power devices under such severe repetitive working operations. Especially, in order to be able to predetermine how many short-circuit pulses can support a given device before failure for given operating conditions it is necessary to point out ageing effects and ageing indicators of failure on the devices and the associated failure mechanisms [1][2][3][4]. Fig.…”

mentioning

confidence: 99%

Experimental investigations of trench field stop IGBT under repetitive short-circuits operations

Arab

Lefebvre

Khatir

et al. 2008

2008 IEEE Power Electronics Specialists Conference

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Robustness of IGBT transistors under repetitive short-circuit conditions is an important requirement. Shortcircuit is one of the most severe stress conditions on IGBTs since a large current flows through the device while supporting whole supply voltage. In this paper, experimental results concerning the ageing of 600 V IGBT under repetitive short circuit operations are presented. A critical energy, which is dependant on test conditions, has been already pointed out which separates two failure modes. The first one, with a cumulative degradation effect, requires some 10 4 short circuits to reach failure and the other one leads to the failure at the first short-circuit with a thermal runaway effect. This paper is focused on the first failure mode. In order to understand the ageing mechanism, 600 V IGBT dies have been packaged by Microsemi. The packaging has been made in order to make possible the characterization of some degradations by the measurement of different electrical characteristics. In this paper, we will detail effects of device ageing on on-state voltage, shortcircuit current and Al metallization degradation which leads to resistance increase.

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mentioning

confidence: 99%

Experimental investigations of trench field stop IGBT under repetitive short-circuits operations

Arab

Lefebvre

Khatir

et al. 2008

2008 IEEE Power Electronics Specialists Conference

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“…3. The threshold voltage is ∼ 6 V and V on at J C = 150 A/cm 2 is ∼ 1.72 V. The saturation current at V GE = 15 V is 3.9 times of the rated current, which is designed for a 10 µs short-circuit capability [13]. For comparison, the measured output characteristics of a conventional floating p-body IGBT with similar design specifications are also plotted in Fig.…”

Section: Resultsmentioning

confidence: 99%

A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance

Feng

Yang

Onozawa

et al. 2015

IEEE Electron Device Lett.

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A new fin p-body insulated gate bipolar transistor (Fin-p IGBT) is designed and experimentally demonstrated. The device features wide trenches and spacer gates, which is implemented using a simple and low-cost process. Compared with the conventional floating p-body IGBT, the fabricated Fin-p IGBT is able to achieve remarkable reduction in both Miller capacitance (−60% at V CE of 15 V) and gate charge (−46%).

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“…Usually a short-circuit protection circuit is used to detect the fault condition and prevent the device failure. Power devices manufactures typically guarantee 10µs of the SC withstand time prior the device destruction [7], [8]. The maximum time the device can sustain a short-circuit condition defines the Short Circuit Safe Operating Area (SCSOA).…”

Section: Short-circuit Testermentioning

confidence: 99%

Development of a new short-circuit tester for 1.7kV high current power devices

Maresca¹,

Cardonia²,

Avallone³

et al. 2014

2014 29th International Conference on Microelectronics Proceedings - MIEL 2014

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The development of a new Short-Circuit (SC) tester for high current and high voltage power semiconductor devices is presented in this work. The proposed apparatus is provided with a Logical Control Unit (LCU) based on an FPGA digital circuit capable to control the system with 20ns programmable time resolution. The power side of the SC tester presents a series switch (SW) used to prevent undesired failure of the Device Under Test (DUT) and a 2.2mF capacitor bank designed with an optimized layout to strongly reduce parasitic stray inductance. Galvanic isolation between logical circuit and power side of the SC tester is ensured by using a custom optical fibers communication interface. Experimental measurements performed on commercial Trench-IGBTs (T-IGBTs) have confirmed the capability of the developed system to deliver high current pulses under supply voltage up to 1.7 kV.

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A study on the short-circuit capability of field-stop igbts

Cited by 70 publications

References 16 publications

Experimental investigations of trench field stop IGBT under repetitive short-circuits operations

Experimental investigations of trench field stop IGBT under repetitive short-circuits operations

A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance

Development of a new short-circuit tester for 1.7kV high current power devices

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