A Sub-1 ppm/°C Bandgap Voltage Reference With High-Order Temperature Compensation in 0.18-μm CMOS Process

Huang, Shalin; Li, Mingdong; Li, Huan; Yin, Peng; Shu, Zhou; Bermak, Amine; Tang, Fang

doi:10.1109/tcsi.2021.3139908

Cited by 20 publications

(10 citation statements)

References 35 publications

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“…When compared to [1] and [8], this work obtains a better TC. Besides, it obtains better noise performance than [6] and [8] and less current consumption than [6]. Also, it is the only circuit that adopts the folding compensation.…”

Section: Post-layout Simulation Resultsmentioning

confidence: 99%

“…The bandgap voltage reference is a crucial component in analog and mixed-signal integrated circuits, as its performance can impact other chips and circuits. In recent years, several high-order compensation circuits have been proposed to address the high-order term V T ln (T/T r ), such as [1][2][3][4][5][6][7]. However, [1] uses transistor current gain, which is a function of temperature and results in poorer circuit reliability.…”

Section: Introductionmentioning

confidence: 99%

“…Since the output bandgap reference voltage in [4, 5] is not generated using resistance, ensuring its accuracy can be challenging. Although [6, 7] perform better, they still exhibit significant deviations at low temperatures.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A novel bandgap voltage reference based on folding compensation

Zhuang

Huang

et al. 2023

Electronics Letters

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Section: Post-layout Simulation Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A novel bandgap voltage reference based on folding compensation

Zhuang

Huang

et al. 2023

Electronics Letters

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“…C m IT  (3) an accurate description of the temperature dependence of the base-emitter voltage can be written as: where Vg0 is the extrapolated bandgap voltage at 0 K and η is a process-related parameter [22]. Tr is a reference temperature that is typically chosen as room temperature if the temperature ranges from -20 ℃ to 80℃ [23,24]. The purpose of the compensation is to extract and cancel the last high-order item of Eq.…”

Section: High-order Curvature Compensationmentioning

confidence: 99%

A 2.2ppm/°C compensated bandgap voltage reference with a double-ended current trimming technique

et al. 2022

IEICE Electron. Express

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This paper presents a high-precision bandgap voltage reference (BGR) with a double-ended current trimming technique. A high-order curvature compensation method is adopted to compensate for the nonlinearity of VBE. The proposed trimming technique using the one-time programmable (OTP) programming cancels the errors caused by process variation and enables bulk production, which achieves a best TC of 2.2 ppm/℃ from -40 ℃ to 125 ℃. The proposed BGR is fabricated in a 0.18-um BCD process with an active area of 0.329 mm 2 . The line sensitivity is 0.18 %/V operating from 2.9 V to 3.6 V.

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“…A. J. Annema et al [12] proposed a mixed-mode BGR, which mixes the PTAT current and CTAT voltage. Yat-Hei Lam et al [13] and A. J. Annema [12] proposed work that has some modifications of the existing ones, either by adding current summation or implementing curvature compensation [14,15]. In Yat-Hei Lam et al's [13] proposed research, the PTAT current and CTAT voltage were added using a resistor and BJT.…”

Section: Introductionmentioning

confidence: 99%

A 10.5 ppm/°C Modified Sub-1 V Bandgap in 28 nm CMOS Technology with Only Two Operating Points

Nagulapalli,

Yassine,

Tammam

et al. 2024

Electronics

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Reference voltage/current generation is essential to the Analog circuit design. There have been several ways to generate quality reference voltage using bandgap reference (BGR) and there are mainly two types: current mode and voltage mode. The current-mode bandgap reference (CBGR) is widely accepted in industry due to having an output voltage which is below 1 V. However, its drawbacks include a lack of proportional to absolute temperature (PTAT) current availability, a large silicon area, multiple operating points, and a large temperature coefficient (TC). In this paper, various operating points are explained in detail with diagrams. Similar to the conventional voltage mode bandgap reference (VBGR) circuits, modifications of the existing circuits with only two operating points have also been proposed. Moreover, the proposed BGR occupies a much smaller area due to eliminating the complimentary to absolute temperature (CTAT) current-generating resistor. A new self-biased opamp was introduced to operate from a 1.05 V supply, reducing systematic offset and TC of the BGR. The proposed solution has been implemented in 28 nm CMOS TSMC technology, and extraction simulations were performed to prove the robustness of the proposed circuit. The targeted mean BGR output is 500 mV, and across the industrial temperature range (−40 to 125 °C), the simulated TC is approximately 10.5 ppm/°C. The integrated output noise within the observable frequency band is 19.6 µV (rms). A 200-point Monte Carlo simulation displays a histogram with a 2.6 mV accuracy of 1.2% (±3-sigma). The proposed BGR circuit consumes 32.8 µW of power from a 1.05 V supply in a fast process and hot (125 °C) corner. It occupies a silicon area of 81 × 42 µm (including capacitors). This design can aim for use in biomedical and sensor applications.

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A Sub-1 ppm/°C Bandgap Voltage Reference With High-Order Temperature Compensation in 0.18-μm CMOS Process

Cited by 20 publications

References 35 publications

A novel bandgap voltage reference based on folding compensation

A novel bandgap voltage reference based on folding compensation

A 2.2ppm/°C compensated bandgap voltage reference with a double-ended current trimming technique

A 10.5 ppm/°C Modified Sub-1 V Bandgap in 28 nm CMOS Technology with Only Two Operating Points

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