A sub-ns time-gated CMOS single photon avalanche diode detector for Raman spectroscopy

Nissinen, Ilkka; Nissinen, Jan; Lansman, A-K.; Hallman, Lauri; Kilpelä, Ari; Kostamovaara, J.; Kögler, Martin; Aikio, Mauri; Tenhunen, Jussi

doi:10.1109/essderc.2011.6044156

Cited by 52 publications

(45 citation statements)

References 3 publications

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“…Line sensors allow high fill-factor by allowing pulse processing electronics to be placed below the detectors. Advanced realizations of these line sensors are beginning to emerge for time-resolved Raman spectroscopy (Blacksberg et al, 2011;Kostamovaara et al, 2013;Maruyama et al, 2014;Nissinen et al, 2011).…”

Section: Spad Arraysmentioning

confidence: 99%

Fluorescence lifetime imaging (FLIM): Basic concepts and some recent developments

et al. 2015

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Section: Spad Arraysmentioning

confidence: 99%

Fluorescence lifetime imaging (FLIM): Basic concepts and some recent developments

et al. 2015

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“…Nowadays, standard CMOS technologies offer the possibility to fabricate both the SPAD detector and fast gating electronics (tens of picoseconds) on the same die [3,4,5]. Thus a simple and compact time-gated single photon CMOS avalanche photo diode (SPAD) detector can be fabricated to suppress fluorescence background in Raman spectroscopy as was suggested and demonstrated using a single SPAD detector in [3] for the first time.…”

Section: Introductionmentioning

confidence: 97%

“…Fortunately, it is possible to suppress the fluorescence background by using intensive short laser pulses to illuminate the sample instead of continuous wave (CW) radiation and then by recording the sample response only during these short pulses [2,3]. The suppression can be achieved because Raman scattered photons are emitted immediately after the collision between the transmitted photons and the sample material but fluorescence photons after a delay characteristic to the sample.…”

Section: Introductionmentioning

confidence: 98%

2×(4×)128 time-gated CMOS single photon avalanche diode line detector with 100 ps resolution for Raman spectroscopy

Nissinen

Lansman

Nissinen

et al. 2013

2013 Proceedings of the ESSCIRC (ESSCIRC)

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A 2x(4x)128 multiphase time-gated single photon avalanche diode (SPAD) line detector has been designed and fabricated in a high voltage 0.35 µm CMOS technology for Raman spectroscopy. The time positions of the photons can be measured with the resolution of 100 ps using four time gates over the whole line detector simultaneously. This approach enables to reduce the fluorescence background of the Raman spectrum markedly. Measurements showed that the time gates can be distributed over the whole line detector with the accuracy of ± 35 ps which is adequate for a time-gated pulsed Raman spectroscopy using a laser pulse width of approximately 150 ps.

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“…Nowadays, SPADs can also be manufactured using CMOS technologies, and thus the time gating can be realized more easily than in the structures presented in the above references. Sub-ns time gating was achieved with the structures presented in [7,8], and these structures were used effectively in time-gated Raman spectroscopy. CMOS technologies also enable one to construct 2-D detector arrays, which opens up a possibility for manufacturing time-gated Raman spectroscopy devices for use in out-oflaboratory applications.…”

Section: Introductionmentioning

confidence: 99%

A 4 × 128 SPAD array with a 78-ps 512-channel TDC for time-gated pulsed Raman spectroscopy

Nissinen

Holma

et al. 2015

Analog Integr Circ Sig Process

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A time-gated 4 9 128 single photon avalanche diode (SPAD) line array with a 512-channel time-to-digital converter (TDC) has been designed and fabricated in a 0.35 lm high voltage CMOS technology for pulsed Raman spectroscopy. In Raman spectroscopy the SPAD array can be designed as a line array with a high fill factor because the electronics can be placed on either side of it. The resolution of the designed TDC is 80 ps in the first four bins, to achieve an accurate time position of the Raman photons, while the last four bins are increased in width to achieve a larger dynamic range. The measured standard deviation of the variation in the width of the first four bins of the 512-channel TDC was less than 10 ps. In addition, crosstalk measurements were carried out to investigate the probability of cross-talk between adjacent SPADs in an array of high density. These showed a cross-talk probability of 0.12 % with a pitch of 32 lm between adjacent SPADs. The highest probability of cross-talk was found to occur with a short delay.

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A sub-ns time-gated CMOS single photon avalanche diode detector for Raman spectroscopy

Cited by 52 publications

References 3 publications

Fluorescence lifetime imaging (FLIM): Basic concepts and some recent developments

Fluorescence lifetime imaging (FLIM): Basic concepts and some recent developments

2×(4×)128 time-gated CMOS single photon avalanche diode line detector with 100 ps resolution for Raman spectroscopy

A 4 × 128 SPAD array with a 78-ps 512-channel TDC for time-gated pulsed Raman spectroscopy

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A sub-ns time-gated CMOS single photon avalanche diode detector for Raman spectroscopy

Cited by 52 publications

References 3 publications

Fluorescence lifetime imaging (FLIM): Basic concepts and some recent developments

Fluorescence lifetime imaging (FLIM): Basic concepts and some recent developments

2&#x00D7;(4&#x00D7;)128 time-gated CMOS single photon avalanche diode line detector with 100 ps resolution for Raman spectroscopy

A 4 × 128 SPAD array with a 78-ps 512-channel TDC for time-gated pulsed Raman spectroscopy

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2×(4×)128 time-gated CMOS single photon avalanche diode line detector with 100 ps resolution for Raman spectroscopy