A Superior Reverse Characteristics of 1.2 kV 4H-SiC Planar JBS Diode Employing Channeling Implantation

Development of an angle detection system for channeling implantation to the c-axis of SiC using birefringence phenomenon

“…The system, consisting of a laser, polarizer, gonio stage, and analyzer, is simple and cost-effective. We conducted experiments on both on-axis and off-axis 4H-SiC (0001) samples, presenting angular dependence results around the [1-100] and [11][12][13][14][15][16][17][18][19][20] rotations. Despite the need for consideration of light incident angles, the performance was comparable to Rutherford backscattering spectrometry.…”

“…5) On the other hand, channeling implantation to SiC (including GaN) can be performed by conventional ion implanters with relatively low acceleration energies. [6][7][8][9][10][11][12][13][14][15][16][17] Channeling ion implantation requires the ion beam to align with the crystal channeling axis. For example, Ref.…”

“…Nevertheless, the slopes of the signals from the minimum with rotation angle are steep and similar for both the optical method and RBS in this rotation direction. Figure 4 shows angular dependences of the signals around the [11][12][13][14][15][16][17][18][19][20] direction from the minimum signals for the Si-face of the 4°off sample, and in this rotation direction, the optical signal was less steep than the RBS signal. However, it is feasible to detect the angle with the minimum signal by observing the increase of signals from the minimum with a resolution of approximately 0.1°.…”

“…Figure 5 shows angular dependences of the optical signals for the Si-face of the 0°off sample, wherein rotation around the [−1100] and [11][12][13][14][15][16][17][18][19][20] directions manifests similar and steep angular dependencies with the angle having the minimum signal of ∼0°. It is also feasible to employ this system for c-axis detection of 0°off (on-axis) GaN (0001) substrates, as evident from the results displayed in Fig.…”

“…5. Angular dependence of the normalized optical signals around the [−1100] and[11][12][13][14][15][16][17][18][19][20] directions from the angle at the minimum signal for the Si-face of 0°off (on-axis) sample.…”