A superstructural 2D-phase diagram for Ga on the Si(111)- 7x7 system

Gallenene epitaxially grown on Si(1 1 1)

“…The deposition of 1/3 monolayer (ML) Ga atoms and annealing subsequently at 550 °C lead to the formation of √ 3 × √ 3-Ga R30° surface reconstruction [20,21] (1 ML is defined as the density of a bulk truncated Si(1 1 1) surface which is 7.85 × 10 14 atoms cm −2 ). When the Ga coverage increases to 1 ML, various structures were observed by low energy electron diffraction (LEED) [21][22][23][24] and STM [20,[25][26][27], such as the phases of 6.3 × 6.3, 11 × 11, 6 √ 3 × 6 √ 3-R30° and 1 × 1. However, in the above reported studies, Ga atoms are all directly adsorbed on Si(1 1 1) − 7 × 7 and the structure of gallenene have not been found.…”

The physics and chemistry of the Schottky barrier height

“…, Si(111)6.3 Â 6.3-Ga, [424][425][426][427] Si(111) 1 Â 1-As, [428][429][430] Si(100) 1 Â 1-S, 431,432 and Si(111) 1 Â 1-Cl, 433,434 fabricated in situ, different metals were deposited at cryogenic temperatures and occasionally in an inert gas environment. Since the ATS surfaces were known to be stable to various degrees and the metals were deposited "softly," the expectation was that the surface dipole on the ATS might survive the metal deposition and be available for SBH adjustment.…”

Scanning tunneling microscopy study on the oxidation and annealing of Ga/Si(111)

“…The surface structures of Ga=Si(111) with different Ga coverages have been widely studied using various methods such as low-energy electron diffraction (LEED), photoemission spectroscopy (PES), X-ray standingwave technique (XSW), and scanning tunneling microscopy (STM). [7][8][9][10][11][12][13][14][15][16][17] These studies revealed that, with an increase in Ga coverage, the ffiffiffi 3 p  ffiffiffi 3 p -R30°structure first appears in the Si(111)-7×7 phase, and the entire surface is covered with the ffiffiffi 3 p  ffiffiffi 3 p -R30°phase at 1=3 ML. With further increase in Ga coverage, intermixed clusters of Ga and Si in the topmost layer appear on the ffiffiffi 3 p  ffiffiffi 3 p -R30°surface, and at around 1 ML, the entire area of the surface is covered with the clusters where the outer half of the Si(111) double layer is substituted by Ga and relaxed to a planar structure (hereinafter referred to as a "bilayer").…”

“…The formation of various superstructures on Ga-deposited Si surfaces depending on the Ga coverage has been reported. In most cases, (100) [1][2][3][4][5][6] or (111) Si [7][8][9][10][11][12][13][14][15][16][17] surfaces have been chosen as substrates. The surface structures of Ga=Si(111) with different Ga coverages have been widely studied using various methods such as low-energy electron diffraction (LEED), photoemission spectroscopy (PES), X-ray standingwave technique (XSW), and scanning tunneling microscopy (STM).…”

“…The detailed phase diagram has been proposed by a recent study using LEED. 17) The bilayer phases consist of Ga-Si domains with different sizes separated by Si-rich boundaries (described later). [9][10][11][12][13][14][15] The reaction of oxygen with a partially ffiffiffi 3 p  ffiffiffi 3 p -R30°covered Si(111) surface was studied.…”