A Surface-Potential-Based High-Voltage Compact LDMOS Transistor Model

Aarts, A.C.T.; D'Halleweyn, N.; Langevelde, R. van

doi:10.1109/ted.2005.846335

Cited by 55 publications

(18 citation statements)

References 14 publications

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“…The temperature rise due to self-heating is taken into account via a thermal network (not shown here) [7]. Low-voltage LDMOS devices lack a thick-field-oxide drift region, and thus have a relatively short drift region; see [1]. In these devices the conductivity of the drift region is always larger than that of the channel region, so that saturation of the current is controlled by the channel region [8].…”

Section: High-voltage Ldmos Devicesmentioning

confidence: 99%

“…For the calculation of the internal drain quasi-Fermi potential V Di , the channel current I ch is expressed as (see [1] with the surface-potential drop Δψ s replaced by V DiS )…”

Section: A Channel Currentmentioning

confidence: 99%

“…Recently, a new compact LDMOS transistor model called MOS Model 20 (MM20) has been developed [1]. This model describes the currents of an LDMOS device in surfacepotential formulations, thereby including accumulation in the drift region.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, in addition to accumulation occurring in the drift region, also pinch-off of the drift region through depletion has been included. The capacitances are described according to the original MM20 model [1]. Through the inclusion of quasi-saturation, however, in the new model the internal drain potential may obtain different values, affecting the capacitance values accordingly.…”

Section: Introductionmentioning

confidence: 99%

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Compact modeling of high-voltage LDMOS devices including quasi-saturation

Aarts

Kloosterman

2006

IEEE Trans. Electron Devices

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Abstract-The surface-potential-based compact transistor model, MOS Model 20 (MM20), has been extended with quasisaturation, an effect that is typical for LDMOS devices with a long drift region. As a result, MM20 extends its application range from low-voltage LDMOS devices up to high-voltage LDMOS devices of about 100V. In this paper, the new dc model of MM20 including quasi-saturation is presented. The addition of velocity saturation in the drift region ensures the current to be controlled by either the channel region or the drift region. A comparison with dc measurements on a 60V LDMOS device shows that the new model provides an accurate description in all regimes of operation, ranging from sub-threshold to super-threshold, in both the linear and saturation regime. Thus, owing to the inclusion of quasi-saturation also the regime of high gate and high drain bias conditions for high-voltage LDMOS devices is accurately described.

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Section: High-voltage Ldmos Devicesmentioning

confidence: 99%

“…For the calculation of the internal drain quasi-Fermi potential V Di , the channel current I ch is expressed as (see [1] with the surface-potential drop Δψ s replaced by V DiS )…”

Section: A Channel Currentmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Compact modeling of high-voltage LDMOS devices including quasi-saturation

Aarts

Kloosterman

2006

IEEE Trans. Electron Devices

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“…Surface potential based LDMOS models have been reported for DC operation only [24], and for the DC and AC domains [25]. The latter combines the low-voltage MOS region with the high-voltage drift region but does not demonstrate scalability.…”

mentioning

confidence: 99%

A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

Everett

Kearney

Rueda³

et al. 2011

IEEE Trans. Electron Devices

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Abstract-A new quasi-two-dimensional (Q2D) model for laterally diffused MOS (LDMOS) RF power transistors is described in this paper. We model the intrinsic transistor as a series PHV-NHV network, where the regional boundary is treated as a revere biased p+/n diode. A single set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a "current-driven" form and specific device features are modeled without having to solve regional boundary node potentials using numerical iteration procedures within the model itself. This fast, process-oriented, nonlinear physical model is scalable over a wide range of device widths and accurately models DC and microwave characteristics. Index Terms-Field Effect transistor (FET), laterally diffused MOS (LDMOS), quasi-two-dimensional (Q2D), transistor model.

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A surface‐potential‐based MOSFET compact model accounting for random doping fluctuations

Guerrieri

Cappelluti

Bonani

et al. 2013

Int J Numerical Modelling

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We present a compact, surface-potential-based modeling approach for deeply scaled digital or radio-frequency metal-oxide-semiconductor field-effect transistor able to account for random doping fluctuations in the device channel. Random dopant fluctuations are one of the primary causes for device variability in nanometer-scale components. The present approach is based on the Green's function formulation of the device external electrical parameters (such as the output current) small-change sensitivity to distributed, space-dependent doping variations in the channel; furthermore, the methodology is used also to assess the small-signal device parameter variations within the limits of a quasi-static description. The present approach allows for an efficient circuit-level sensitivity analysis and has been applied to the PSP compact model through a Verilog-A code implemented within the ADVANCED DESIGN SYSTEM (Agilent Technologies, Santa Clara, CA, U.S.A.) simulator. Examples are provided to show that the model predictions are in good agreement with far more time-consuming simulations.

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A Surface-Potential-Based High-Voltage Compact LDMOS Transistor Model

Cited by 55 publications

References 14 publications

Compact modeling of high-voltage LDMOS devices including quasi-saturation

Compact modeling of high-voltage LDMOS devices including quasi-saturation

A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

A surface‐potential‐based MOSFET compact model accounting for random doping fluctuations

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