A Surface Potential Model for Metal-Oxide-Semiconductor Transistors Operating near the Threshold Voltage
Hwang-Cherng Chow,
Bo-Wen Lee,
Shang-Ying Cheng
et al.
Abstract:Device physics and accurate transistor modeling are necessary to reduce the operating voltage near the threshold for power-constrained circuits. Conventional device modeling for metal-oxide-semiconductor (MOS) transistors focuses on operations in either strong or weak inversion regimes, and the electrostatics at gate biases near the threshold voltage is rarely studied. This research proposed an analytical model to describe the distribution of the surface potential along the channel for near-threshold operation… Show more
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