A Survey of Wide Bandgap Power Semiconductor Devices

Millán, José del R.; Godignon, P.; Perpiñà, X.; Pérez‐Tomás, Amador; Rebollo, J.

doi:10.1109/tpel.2013.2268900

Cited by 1,984 publications

(734 citation statements)

References 38 publications

Supporting

Mentioning

727

Contrasting

Unclassified

Order By: Relevance

“…Theoretically, GaN is an excellent material for making power switching devices targeting high-voltage, high-frequency, and high-temperature applications because of its large critical electric field, high electron mobility, low carrier concentration, and good thermal conductivity [9]. However, because of the lack of commercially available low-cost and high-quality GaN substrates, GaN epilayers are mainly grown on Si substrates and become the technical bottleneck that limits the available device type, voltage rating, and thermal conductivity.…”

Section: Gan-based Power Devicesmentioning

confidence: 99%

Performance Evaluation of GaN-Based Synchronous Boost Converter under Various Output Voltage, Load Current, and Switching Frequency Operations

Han¹,

Sarlioglu²

2015

Journal of Power Electronics

View full text Add to dashboard Cite

Gallium nitride (GaN)-based power switching devices, such as high-electron-mobility transistors (HEMT), provide significant performance improvements in terms of faster switching speed, zero reverse recovery, and lower on-state resistance compared with conventional silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET). These benefits of GaN HEMTs further lead to low loss, high switching frequency, and high power density converters. Through simulation and experimentation, this research thoroughly contributes to the understanding of performance characterization including the efficiency, loss distribution, and thermal behavior of a 160-W GaN-based synchronous boost converter under various output voltage, load current, and switching frequency operations, as compared with the state-of-the-art Si technology. Original suggestions on design considerations to optimize the GaN converter performance are also provided.

show abstract

Section: Gan-based Power Devicesmentioning

confidence: 99%

Performance Evaluation of GaN-Based Synchronous Boost Converter under Various Output Voltage, Load Current, and Switching Frequency Operations

Han¹,

Sarlioglu²

2015

Journal of Power Electronics

View full text Add to dashboard Cite

show abstract

“…Silicon carbide appears as a suitable semiconductor for these applications, given its superior properties compared with silicon [4], nevertheless the lower power cycling capability demonstrated by silicon carbide devices and modules when the traditional packaging methods are used [5], is limiting the speed of adoption of SiC in these areas, which will fully exploit its wide bandgap properties. There are few studies of SiC devices in pressure packages and given the benefits of this packaging method a prototype for the evaluation of SiC using pressure contacts has been designed and evaluated.…”

Section: Introductionmentioning

confidence: 99%

Pressure contact multi-chip packaging of SiC Schottky diodes

Gonzalez

Alatise

Mawby

et al. 2017

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

View full text Add to dashboard Cite

“…The technology of silicon carbide (SiC) power devices is facing a rapid development in recent years and, in consequence, the area of its application is continuously extending [1,2]. New diodes and transistors (unipolar JFETs and MOSFETs, as well as bipolar BJTs), available mostly in 1200 V and 1700 V voltage class, can be applied in three-phase converters rated up to several tens of kVAs [2][3][4][5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

A study on power losses of the 50 kVA SiC converter including reverse conduction phenomenon

Rąbkowski¹,

Płatek²

2016

Bulletin of the Polish Academy of Sciences Technical Sciences

View full text Add to dashboard Cite

Abstract. This paper deals with performance of the 50 kVA three-phase converter built with switches based on SiC MOSFET and anti-parallel Schottky diodes. In contrast to popular IGBT converters, a negative switch current is capable of flowing through the reverse conducting transistor, which results in different distribution of power losses among the devices. Thus, equations describing the conduction power losses of the transistor and diode are improved and verified by means of circuit simulations in Saber. Moreover, a comparison of power losses calculated with the use of standard and new equations is also shown. Total power losses in three SiC MOSFET modules of a 50 kVA converter operating at 20 kHz are up to 30% lower when reverse conduction is taken into account. This shows the importance of the discussed problem and proves that much better accuracy in the estimation of power losses and junction temperatures of SiC devices may be obtained with the proposed approach.

show abstract

A Survey of Wide Bandgap Power Semiconductor Devices

Cited by 1,984 publications

References 38 publications

Performance Evaluation of GaN-Based Synchronous Boost Converter under Various Output Voltage, Load Current, and Switching Frequency Operations

Performance Evaluation of GaN-Based Synchronous Boost Converter under Various Output Voltage, Load Current, and Switching Frequency Operations

Pressure contact multi-chip packaging of SiC Schottky diodes

A study on power losses of the 50 kVA SiC converter including reverse conduction phenomenon

Contact Info

Product

Resources

About