A Switchless, $Q$-Band Bidirectional Transceiver in 0.12-$\mu$m SiGe BiCMOS Technology

Kim, Joohwa; Buckwalter, James F.

doi:10.1109/jssc.2011.2174283

Cited by 28 publications

(10 citation statements)

References 21 publications

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“…9, which consists of the T/R switch, two bidirectional low‐noise amplifiers/power amplifiers (LNA/PA), and an antenna. By employing dual‐band bidirectional amplifiers similar to that presented in [14], which operate as PA and LNA in the transmitting and receiving modes, respectively, between the T/R switch and the dual‐band dual‐polarisation antenna, enabling high‐power and low‐noise signals to be transmitted and received in these modes, respectively, the high insertion loss of the T/R switch can be alleviated.…”

Section: Simulation and Measurement Resultsmentioning

confidence: 99%

High‐isolation multi‐port millimetre‐wave CMOS dual‐band T/R switch with integrated band‐pass filtering function

Nguyen

2017

IET Microwaves, Antennas & Propagation

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Fully integrated 0.18‐µm CMOS dual‐band band‐pass filtering transmit/receive (T/R) switch operating in two frequency bands of 35.5–43.7 and 56.5–63 GHz is reported. The developed T/R switch consists of three single‐pole double‐throw switches, each designed based on a band‐pass filter with shunt nMOS transistors performing the switching function. The measured insertion losses of the switch are 8.9/12.5 and 10/12.7 dB for receiving and transmitting operations at 40/60 GHz, respectively. The measured stop‐band rejection ratio between 40 and 51 GHz is over 30/22 dB for two operations, respectively. The measured isolation is 56/51 and 57/51 dB for two operations at 40/60 GHz, respectively. The measured input 1‐dB compression points of the switch are 23, 16.5 for single‐tone 40‐, 60‐GHz input signal and 18/14 dBm at 40/60 GHz for concurrent dual‐tone 40/60‐GHz input signals for transmitting operation, respectively. The total chip size is 1840 µm × 860 µm excluding all the testing pads.

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Section: Simulation and Measurement Resultsmentioning

confidence: 99%

High‐isolation multi‐port millimetre‐wave CMOS dual‐band T/R switch with integrated band‐pass filtering function

Nguyen

2017

IET Microwaves, Antennas & Propagation

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“…Generally, transmitter (Tx) and receiver (Rx) arrays are individual in phased‐array transceivers. To reduce the chip size of arrays significantly, bidirectional circuit components have been proposed to realize the Tx/Rx operations for further improving the integration of TDD phased‐array transceivers 5–9 …”

Section: Introductionmentioning

confidence: 99%

A 24‐GHz active up/down bidirectional mixer in 130‐nm RF CMOS

Qing-shan

et al. 2022

Int J RF Mic Comp-Aid Eng

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An active bidirectional mixer based on modified Gilbert cell has been proposed to perform the up/down conversion at 24 GHz in a 130‐nm RF CMOS. Employing the transconductance gm/load sharing stage, the mixer not only reduces the required power of local oscillator (LO) signal, but also increases the linearity and the conversion gain (CG). With a 2‐dBm LO power, the mixer achieves measured CG of −1.7 dB, noise figure (NF) of 14.6 dB, and output 1‐dB compression point (OP1dB) of −8.4 dBm at 24 GHz in the up‐conversion mode. In the down‐conversion mode, the mixer exhibits measured CG of 2.6 dB, NF of 15.9 dB, and input 1‐dB compression point (IP1dB) of −0.1 dBm at 24 GHz. From 23 to 25 GHz, the measured LO‐to‐RF and LO‐to‐IF isolations (ISOs) are better than 55 dB and 48 dB, respectively. The chip area including all testing pads is 0.75 × 0.8 mm2, which consumes 10.5 mW from a supply of 1.5 V.

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“…As an attempt to remove T/R switches, authors in Refs. presented a topology utilizing controllable impedance matching networks. This approach isolates between the power amplifier and low‐noise amplifier by setting different matching conditions directly via biasing.…”

Section: Introductionmentioning

confidence: 99%

A 5.8‐17.6 GHz cascaded bi‐directional distributed gain amplifier utilizing asymmetric stages in 65 nm CMOS

Nguyen

Nam

Lee

et al. 2019

Micro & Optical Tech Letters

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A cascaded bidirectional distributed gain amplifier (BDGA) with asymmetrical stages has been reported. By cascading two unit BDGAs using a common source (CS) stage in the middle, the BDGA benefits the multiplicative gain enhancement while it can still achieve a wide bandwidth owing to the distributed nature of the two BDGAs. Each gain stage of the BDGA is composed of the CS output stage to enhance the linearity in parallel with the cascode input stage to improve noise performance by providing higher gain. The proposed circuit architecture is fabricated in a 65 nm CMOS. The measurements exhibit a gain of 10.5 dB, and the 3‐dB bandwidth from 5.8 to 17.6 GHz. The measured output P1dB is 6.8 dBm along with 9.3 dBm of the saturated output power at 10 GHz. The circuit draws 75 mA from a 1.2 V supply and occupies 1.1 × 0.6 mm2 of the chip area.

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A Switchless, $Q$-Band Bidirectional Transceiver in 0.12-$\mu$m SiGe BiCMOS Technology

Cited by 28 publications

References 21 publications

High‐isolation multi‐port millimetre‐wave CMOS dual‐band T/R switch with integrated band‐pass filtering function

High‐isolation multi‐port millimetre‐wave CMOS dual‐band T/R switch with integrated band‐pass filtering function

A 24‐GHz active up/down bidirectional mixer in 130‐nm RF CMOS

A 5.8‐17.6 GHz cascaded bi‐directional distributed gain amplifier utilizing asymmetric stages in 65 nm CMOS

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