2021
DOI: 10.1016/j.inoche.2021.108646
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A systematic influence of Cu doping on structural and opto-electrical properties of fabricated Yb2O3 thin films for Al/Cu-Yb2O3/p-Si Schottky diode applications

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Cited by 27 publications
(10 citation statements)
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“…From the extrapolation of the straight line portion of the curve on to the xaxis, the band gap value was found to be 3.15 eV for the prepared NiO nano particles. The calculated value of energy gap agrees well with the recent reports by Vivek et al The band gap value of NiO nano particles were found to get minimized through green synthesize root[13,21].…”
supporting
confidence: 90%
“…From the extrapolation of the straight line portion of the curve on to the xaxis, the band gap value was found to be 3.15 eV for the prepared NiO nano particles. The calculated value of energy gap agrees well with the recent reports by Vivek et al The band gap value of NiO nano particles were found to get minimized through green synthesize root[13,21].…”
supporting
confidence: 90%
“…This fact is probably related to the overlapping cut-off wavelengths in the transmittance diagram of both oxides: zinc oxide and europium oxide 61 . Moreover, the lack of noticeable signal coming from Yb 2 O 3 in the sample of ZY_500 and ZY_600 thin films is caused by the overlapping absorption edges of ZnO and Yb 2 O 3 thin films, for which the absorption maximum falls at ~ 350–360 nm 62 . A noticeable trend in the dependence of the transmittance value on the calcination temperature is that the transmittance decreases with increasing temperature from 500 to 600 °C.…”
Section: Resultsmentioning
confidence: 99%
“…The BH modification occupies a huge research field in semiconductor device electronics. Many studies have been performed by using the different oxide interlayers in the MS diodes [14][15][16][17][18][19][20][21][22]. According to table 2, the diode quantities of Al/CrO 3 /p-Si contact are compared with those of other oxide/p-Si devices described below [14][15][16][17][18][19][20].…”
Section: Cheung Functionsmentioning
confidence: 99%
“…Many studies have been performed by using the different oxide interlayers in the MS diodes [14][15][16][17][18][19][20][21][22]. According to table 2, the diode quantities of Al/CrO 3 /p-Si contact are compared with those of other oxide/p-Si devices described below [14][15][16][17][18][19][20]. The Al/CrO 3 /p-Si diodes outperform any existing similar contacts on several important basic contact parameters based on the comparison.…”
Section: Cheung Functionsmentioning
confidence: 99%
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