A technique to extract extrinsic parameters of HEMTs

Jeon, Man-Young

doi:10.1002/mop.20675

Cited by 5 publications

(4 citation statements)

References 7 publications

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“…The small-signal equivalent circuit (SEC) of FET is very useful for the device performance analysis (gain, noise, etc.) and modeling of the largesignal characteristics with bottom-up modeling technique in the perspective of fabricating high power SiC devices [3].…”

Section: Introductionmentioning

confidence: 99%

“…The Crank-Nicolson finite-difference time-domain (CN-FDTD) method [1][2][3] is a promising unconditionally stable scheme that the Courant-Friedrich-Levy (CFL) condition can be totally removed so that the time-step size is no longer restricted by stability. The Crank-Nicolson (CN) scheme applied to the two-dimensional FDTD [4] technique was first introduced in [1].…”

Section: Introductionmentioning

confidence: 99%

“…The CN scheme has second-order accuracy in time and space. Applying the CN scheme to Maxwell equations in 3D obtains a huge sparse system [3]. With the increase of the time step size, the condition number of the coefficient matrix resulted from the CN-FDTD method significantly deteriorates.…”

Section: Introductionmentioning

confidence: 99%

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An improved small‐signal equivalent circuit model for 4H‐SIC power mesfets

Xu¹,

Guo²,

Xu³

et al. 2008

Micro & Optical Tech Letters

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attractive that single-to-multiple channel wavelength conversion can be potentially implemented by appropriately changing the number of the CW waves. For this fiber, the dispersion changes is very small over a wavelength range of over 100 nm, the quasi phase matching is maintained automatically. Therefore, it is expected that MF will play an important role in wavelength conversion, especially in single-to-multiple channel wavelength converter. circuit (CSEC). And a new extraction procedure for the modified SEC parameters is also proposed. The calculated S-parameters using the modified SEC model (MSEC) fit the measured ones very well up to 20 GHz. ABSTRACT: The frequency-dependence of parasitic resistances (R s and R d ) for 4H-SiC power MESFETs is empirical modeled by adding two disperse parameters based on conventional small-signal equivalent

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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An improved small‐signal equivalent circuit model for 4H‐SIC power mesfets

Xu¹,

Guo²,

Xu³

et al. 2008

Micro & Optical Tech Letters

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show abstract

“…There are several linear model circuit topologies described in [9][10][11][12]. The linear model presented in this work, developed by Dambrine et al [10], is the most commonly used.…”

Section: Resultsmentioning

confidence: 99%

Extrinsic and Intrinsic Modeling of InGaAs/InAlAs pHEMT for Wireless Applications

Ahmad

Jamuar

Isa

et al. 2015

AMM

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This paper presents the linear modelling of high breakdown InP pseudomorphic High Electron Mobility Transistors (pHEMT) that have been developed and fabricated at the University of Manchester (UoM) for low noise applications mainly for the Square Kilometre Array (SKA) project. The ultra-low leakage properties of a novel InGaAs/InAlAs/InP pHEMTs structure were used to fabricate a series of transistor with total gate width ranging from 0.2 mm to 1.2 mm. The measured DC and S-Parameters data from the fabricated devices were then used for the transistors’ modelling. The transistors demonstrated to operate up to frequencies of 25 GHz. These transistors models are used in the design of Low Noise Amplifiers (LNAs) using fully Monolithic Microwave Integrated Circuit (MMIC) technology.

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Harmonic analysis of GaN-HEMTs at different temperatures and frequencies using Volterra power series

Yıldırım

Karaarslan

2014

International Journal of Electronics

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A technique to extract extrinsic parameters of HEMTs

Cited by 5 publications

References 7 publications

An improved small‐signal equivalent circuit model for 4H‐SIC power mesfets

An improved small‐signal equivalent circuit model for 4H‐SIC power mesfets

Extrinsic and Intrinsic Modeling of InGaAs/InAlAs pHEMT for Wireless Applications

Harmonic analysis of GaN-HEMTs at different temperatures and frequencies using Volterra power series

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