A Telecom O-Band Emitter in Diamond

Abstract

Color centers in diamond are promising platforms for quantum technologies. Most color centers in diamond discovered thus far emit in the visible or near-infrared wavelength range, which are incompatible with long-distance fiber communication and unfavorable for imaging in biological tissues. Here, we report the experimental observation of a new color center that emits in the telecom O-band, which we observe in silicon-doped bulk single crystal diamonds and microdiamonds. Combining absorption and photoluminescence measurements, we identify a zero-phonon line at 1221 nm and phonon replicas separated by 42 meV. Using transient absorption spectroscopy, we measure an excited state lifetime of around 270 ps and observe a long-lived baseline that may arise from intersystem crossing to another spin manifold.

All‐Optical Thermometry with Infrared Emitting Defects in Diamond

“…[27] The strong intensity of the 1221 nm defect also suggests that it consists of one or more of the main impurities in the diamond and has been tentatively assigned to a SiV 2 :H (− ) defect. [25,28] It is also interesting to note that the PL lineshape is similar to the so-called 1.660 eV (746.9 nm) line with a phonon sideband energy of 59 meV found in Ni-doped diamond. [29] Further to previous work on this defect, we present a detailed analysis of the PL temperature dependence and consider a number of methods to extract the temperature from the PL line-shape.…”

“…We also note that these shorter wavelength PL features do not appear in bulk diamonds that also contain the 1221 nm defect. [25] Diamond particles made from such material could be beneficial for reducing the background within the 1221 nm defect PL range but is not considered here.…”

“…[23,24] In this work, we consider a recently discovered color center in diamond that emits in the second near-infrared transparency window, 1000-1700 nm (NIR-II). [25] In this wavelength range absorption and scattering in biological tissue are significantly lower than in the spectral region below 1000 nm. [22,26] This defect center has a ZPL at 1221 nm (at a temperature of T = 0 K) and a number of distinct quasi-local vibrations that dominate the phonon sideband (PSB).…”

An optimized diamond nanopillar for enhanced NV-center collection efficiency

“…Beyond NV centers, the devices developed here could be easily translated to alternative diamond defects, including the negatively charged group-IV emitters 51 and other emerging color centers. 52,53 Finally, our design principles are also applicable to emitters in alternative materials, such as defect centers in SiC 54 or rare-earth ions in doped glasses. 55…”

Multicone Diamond Waveguides for Nanoscale Quantum Sensing

“…Beyond NV centers, the devices developed here could be easily translated to alternative diamond defects, including the negatively charged group IV emitters 53 and other emerging color centers. 54,55 Finally, our design principles also apply to emitters in alternative materials, such as defect centers in SiC 56 or rare-earth ions in doped glasses. 57 ■ ASSOCIATED CONTENT * sı Supporting Information…”