A TEM study of in-grown stacking faults in 3C-SiC layers grown by CF-PVT on 4H-SiC substrates

Marinova, Maya; Mercier, F.; Mantzari, Alkioni; Galben, Irina; Chaussende, Didier; Polychroniadis, Efstathios K.

doi:10.1016/j.physb.2009.08.190

Cited by 13 publications

(17 citation statements)

References 8 publications

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“…In particular, the formation energies of SFs in 3C-SiC decrease with the temperature (particularly for ESFs). Even though 6H-like SF shows a lower formation energy than 4H-like [15], and it is considered the most common inclusion of other polytypes in 3C-SiC [25], we clearly observe the peak related to the presence of 6H-like SFs only in the first 15 µm of the film (from the removed Si interface to the surface, Figure 4c). Meanwhile, it was possible to detect the peak attributable to 4H-like SFs in the first 20-25 µm of the film (Figure 4b).…”

Section: Resultsmentioning

confidence: 83%

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

et al. 2020

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We report a comprehensive investigation on stacking faults (SFs) in the 3C-SiC cross-section epilayer. 3C-SiC growth was performed in a horizontal hot-wall chemical vapour deposition (CVD) reactor. After the growth (85 microns thick), the silicon substrate was completely melted inside the CVD chamber, obtaining free-standing 4 inch wafers. A structural characterization and distribution of SFs was performed by μ-Raman spectroscopy and room-temperature μ-photoluminescence. Two kinds of SFs, 4H-like and 6H-like, were identified near the removed silicon interface. Each kind of SFs shows a characteristic photoluminescence emission of the 4H-SiC and 6H-SiC located at 393 and 425 nm, respectively. 4H-like and 6H-like SFs show different distribution along film thickness. The reported results were discussed in relation with the experimental data and theoretical models present in the literature.

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Section: Resultsmentioning

confidence: 83%

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

et al. 2020

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“…Much attention has been focused on fiber as reinforced material. Carbon fiber reinforced silicon carbide composites are widely used in aerospace, vehicle engineering, mechanical engineering, optical engineering and other fields, because the composites combine the excellent mechanical properties of carbon fiber with good oxidation resistance of silicon carbide [3][4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Research of dispersion uniformity of carbon fiber in short carbon fiber reinforced silicon carbide composites

Hao

Tang

Zhang

2012

2012 7th International Forum on Strategic Technology (IFOST)

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Dispersion of short carbon fibers in silicon carbide (SiC) matrix directly influences the homogeneity of mechanical properties of short carbon fiber reinforced silicon carbide composites, which is always a aporia in fabrication of short carbon fiber reinforced SiC composites, as well as the concentration for investigators in and abroad. in this paper, methyl cellulose (MC), carboxymethyl cellulose sodium(CMC) and hydroxyethyl cellulose (HEC) are respectively used as dispersant ,worked carbon fibers are dispersed to unifilar by ultrasonic with addition of the dispersant. Then Ball milling the silicon carbide matrix and the dispersed fibers under the predefined formular to realize the homogeneous mix of the two substances. The paper mainly studies about effects of dispersants, ball milling time and concentration of short carbon fibers on dispersivity of carbon fibers among silicon carbide matrix, and the dispersion of fibers among the matrix was characterized by scanning electron microscope (SEM). The results show that the best dispersion appears when the content of fiber is 10vol% and with HEC as the dispersant , ball milling of 48h.

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“…It is obvious that independently of the individual defects that always exist, there are several other combined ones. One of them is presented by the high resolution image of figure 10(b) [59] .This image presents the formation of ( ̅ 11) SFs on a coherent TB. The observed structure could be regarded as a multiple twin where two Σ=3 boundaries, in the ( 111) and ( ̅ 11) planes, and one incoherent Σ=9 boundary are interacting.…”

Section: Defects Combinationmentioning

confidence: 99%

“…However, for the same orientation of the two lattices there could be a variety of positions of the interface separating them. An inclined interface could be confined by the introduction of SFs or micro-twinned lamella extending along the (111) planes as it is shown in the HRTEM images in figure (10b) [59] respectively. In this case the 3C-/6H-SiC interface lies on the (111) planes of the cubic lattice, which coincide with the (1 ̅ 02) planes of the hexagonal lattice.…”

Section: Simultaneous Presence Of β and α-Sicmentioning

confidence: 99%

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Micro- and nano-structural characterization of silicon carbide and related materials, for power devices, using TEM

Chandran¹,

Τσαντράν²

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Η παρούσα διατριβή πραγματεύεται τον Μικρο- και Νανο-δομικό χαρακτηρισμό του Ανθρακοπυριτίου (SiC) για ημιαγωγικές διατάξεις ισχύος, με τη χρήση Ηλεκτρονικής Μικροσκοπίας Διέλευσης (TEM).Πιο συγκεκριμένα, μελετάται η επιφάνεια και η ενδοεπιφάνεια του 4Η-SiC με προσμίξεις Ge. Διαπιστώνεται ότι σχηματίζονται νησίδες Ge στην επιφάνεια του SiC οι οποίες έχουν συγκεκριμένες σχέσεις προσανατολισμού του πλέγματος της νησίδος με αυτό του υποβάθρου, παρ’ όλη την πολύ μεγάλη πλεγματική τους διαφορά. Με τον συνδυασμό φασματοσκοπίας Raman και ανάλυσης XPS διαπιστώνεται η δημιουργία φυλλιδίων γραφενίου και γραφίτη, που σχηματίζονται από την χημική αντίδραση του Ge με την επιφάνεια του 4Η-SiC. Επιπλέον ένας λεπτομερής δομικός χαρακτηρισμός με τη χρήση ηλεκτρονικής μικροσκοπίας διέλευσης και τη συμβολή της φασματοσκοπίας Raman σε κρυστάλλους 15R-SiC απέδειξε ότι τα επίπεδα διδυμίας συνδέονται με την επιστοίβαση διπλών στρωμάτων Si-C του τύπου (22) ή/και (33), παράλληλα του επιπέδου (0001), όπως επίσης την διπλή κρυσταλλική φύση του υλικού με την σύγχρονη παρουσία 4H- και 15R-SiC μαζί με την σχετιζόμενη με παραμόρφωση σπάνια παρουσία 3C-SiC. Τέλος, οι τεχνικές STEM και EDS χρησιμοποιήθηκαν για την μελέτη της σύστασης και των διεργασιών διάχυσης των ωμικών επαφών Ti/Al/Ti/Au και Ti/Al/Mo/Au σε ετερο-επαφές GaN/AlGaN/GaN. Η μελέτη με τις τεχνικές STEM και EDS έδειξαν ότι η διάχυση στην επαφή με το Mo είναι μικρότερη σε σύγκριση με αυτή της επαφής με το Ti. Παρά το υψηλό σημείο τήξης του Mo, το οποίο δεν διαλύει τον χρυσό, το στρώμα του Mo δεν εμποδίζει τη διάχυση του Au και του Al στους 800ο C. Η μελέτη δεν έδειξε μεγάλες διαφορές στη σύσταση των ενώσεων, που σχηματίζονται και στις δύο περιπτώσεις μετά την ανόπτηση, η οποία εξηγεί την μικρή εξάρτηση της ωμικής αντίστασης της επαφής από το μεταλλικό στρώμα που χρησιμοποιείται.

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A TEM study of in-grown stacking faults in 3C-SiC layers grown by CF-PVT on 4H-SiC substrates

Cited by 13 publications

References 8 publications

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

Research of dispersion uniformity of carbon fiber in short carbon fiber reinforced silicon carbide composites

Micro- and nano-structural characterization of silicon carbide and related materials, for power devices, using TEM

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