1987
DOI: 10.1557/proc-102-245
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A Tem Study of Rhodium on Gaas; Reactions and Morphology

Abstract: Reaction between Rhodium films and n-type GaAs in the temperature range of 300° to 700°C has been examined using the TEM to look at the interface and phases present. The reaction between Rh and GaAs produces a layered structure of Rh/RhGa/RhAs2/GaAs based on RBS and TEM. Above 300°C, the RhGa phase has an orientation relationship of [011]RhGa // [100]GaAs. In cross-section, an interpenetrated layered structure was observed with equiaxed RhGa above columnar grains of RhAs2. Rhodium is the moving species as sugg… Show more

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