A Temperature Gradient-Based Potential Defects Identification Method for IGBT Module

Gao, Bing; Yang, Fan; Chen, Minyou; Li, Ran; Ullah, Irfan; Xu, Shengyou; Mawby, P.A.

doi:10.1109/tpel.2016.2565701

Cited by 68 publications

(21 citation statements)

References 29 publications

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“…Table 1 shows the material properties of FEM model. The electric conductivity of IGBT die is temperature-dependent which can be obtained based on the current-voltage curve [15]. Hence, the pure resistance r die of IGBT die is calculated as in ( 14), where V CE_25 and V CE_150 are the conduct voltage at 25 • C and 150 • C at conduct current I.…”

Section: Model Buildingmentioning

confidence: 99%

“…Hence, the pure resistance r die of IGBT die is calculated as in ( 14), where V CE_25 and V CE_150 are the conduct voltage at 25 • C and 150 • C at conduct current I. The electrical conductivity of die σ is calculated based on the chip size as in (15), where l, A and T are length, conduct area and temperature of IGBT die, respectively. The ambient temperature sets at 25 • C. The ceramic and all boundaries are set as electric insulation except power supply and ground.…”

Section: Model Buildingmentioning

confidence: 99%

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A Study on the Effect of Bond Wires Lift-Off on IGBT Thermal Resistance Measurement

et al. 2021

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Bond wire lift-off will cause an increase of remaining wires’ power dissipation, which usually is ignored for healthy modules. However, only partial wires’ power dissipation transfers through thermal path from junction to case, which will lead to overestimate the whole power dissipation from collector to emitter pole and underestimate the calculated thermal resistance using the proportion of temperature difference to power dissipation. A FEM model is established to show the change of heat flow after bond wires were removed, the temperature of bond wires increases, and the measured thermal resistance decrease after bond wires lift-off. It is validated by experimental results using open package Insulated Gate Bipolar Transistor (IGBT) modules under different current conditions. This conclusion might be helpful to indicate the bond wires lift-off and solder fatigue by comparing the change of measured thermal resistance. Using the Kelvin setup to measure thermal resistance will cause misjudgment of failure mode due to the ignoring of wires’ power dissipation. This paper proposed that the lift-off of bond wires will lead to underestimating the thermal resistance measurement, which will overestimate the lifetime of IGBT module and misjudge its state of health.

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Section: Model Buildingmentioning

confidence: 99%

Section: Model Buildingmentioning

confidence: 99%

A Study on the Effect of Bond Wires Lift-Off on IGBT Thermal Resistance Measurement

et al. 2021

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“…Air velocity was fixed to 3m/s and 0.25m/s to reach these values for IGBT and diode, respectively. With regard to the critical failure mechanism (thermo mechanical fatigue), thermal modeling plays a major role in lifetime estimation of power semiconductors [17]- [19].…”

Section: B Power Converter Modelingmentioning

confidence: 99%

Reciprocal and Self-Aging Effects of Power Components on Reliability of DC–DC Boost Converter With Coupled and Decoupled Thermal Structures

Samavatian

Iman‐Eini

Avenas

et al. 2019

IEEE Trans. Compon., Packag. Manufact. Technol.

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Reliable and unceasing exploitation of power electronic converters plays a major part in numerous applications. The aging effects on the performance of a DC-DC boost power converter with different thermal structures is under consideration in this study. This paper demonstrates the feasibility of using sensitivity analysis for a much more accurate estimation in the power converters' performances. This paper deals with a DC-DC boost converter as a case study in two thermal structures (coupled and decoupled) for electric vehicle application. Significant self and reciprocal effects of components can thoroughly impress the reliability assessment in the thermal coupled structure. It reveals that the useful lifetime of IGBT and diode can decrease by 35% and 44%, respectively. It is while that in the thermal decoupled structures, there are not significant reciprocal effects neither in electrical or thermal operating points. The results reveal the importance of reciprocal aging and self-aging effects on the reliability assessment in the coupled thermal structure.

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“…As the material layers are bonded in rigid connection, they will remain at the same length when the temperature changes causing a tendency of deformation. Assuming that the length of chip and solder both are L 0 initially and L T is the length at a defined temperature T, equation (2) can be used for calculating the constrained strain of each layer [33].…”

Section: A Finite Element Modelingmentioning

confidence: 99%

Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device

Gonzalez

et al. 2017

IEEE Trans. Device Mater. Relib.

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145

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A Temperature Gradient-Based Potential Defects Identification Method for IGBT Module

Cited by 68 publications

References 29 publications

A Study on the Effect of Bond Wires Lift-Off on IGBT Thermal Resistance Measurement

A Study on the Effect of Bond Wires Lift-Off on IGBT Thermal Resistance Measurement

Reciprocal and Self-Aging Effects of Power Components on Reliability of DC–DC Boost Converter With Coupled and Decoupled Thermal Structures

Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device

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