A test structure to separately analyze CMOSFET reliabilities around center and edge along the channel width

Abstract

A test structure with four kinds of MOSFETs(i.e., [A]([D]) with a short(long) channel-length all over the channel width, [B]([C]) with the short(long) and the long(short) channel-length around the center and the both isolation-edges, respectively) was proposed to separately analyze the location where the hot-carrierinduced CMOSFET reliability is determined around the center or the isolation-edge along the channelwidth. The reliability data were almost categorized into three (i.e., [A], [B]/[C] and [D]), which mean that the reliabilities are nearly the same around center or isolation-edge for the CMOSFETs.