A theoretical method for analyzing the glass-crystal transformation observed by DSC in the continuous heating regime. Application to the Sb0.16As0.36Se0.48 semiconducting alloy

Glass transition and crystallization kinetics of Inx(Se0.75Te0.25)100−x chalcogenide glasses

“…Then it is easy to deduce the formula of the growth mode parameter, m [18,30] by defining an extended volume of transformed material and assuming spatially random nucleation [31,32] the crystallized volume fraction can be rewritten…”

“…An overview of the value of m that occurs for different types of reaction has been given in the literature [30,33]. For interface controlled growth, m assumes the values 1, 2 and 3 for one-, two-and three-dimensional growth, respectively.…”